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IXTP28P065T PDF预览

IXTP28P065T

更新时间: 2024-01-03 06:13:48
品牌 Logo 应用领域
IXYS 局域网开关脉冲晶体管
页数 文件大小 规格书
6页 198K
描述
Power Field-Effect Transistor, 28A I(D), 65V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN

IXTP28P065T 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:4.88
Base Number Matches:1

IXTP28P065T 数据手册

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TrenchPTM  
Power MOSFETs  
IXTA28P065T  
IXTP28P065T  
VDSS = - 65V  
ID25 = - 28A  
RDS(on)  
45mΩ  
P-Channel Enhancement Mode  
Avalanche Rated  
TO-263 AA (IXTA)  
G
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
- 65  
- 65  
V
V
D (Tab)  
VDGR  
TO-220AB (IXTP)  
VGSS  
VGSM  
Continuous  
Transient  
±15  
±25  
V
V
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
- 28  
- 90  
A
A
G
D
S
D (Tab)  
= Drain  
IA  
ES  
TC = 25°C  
TC = 25°C  
- 28  
200  
A
G = Gate  
S = Source  
D
mJ  
Tab = Drain  
PD  
TC = 25°C  
83  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z International Standard Packages  
z Avalanche Rated  
Md  
Mounting Torque (TO-220)  
1.13 / 10  
Nm/lb.in.  
z Extended FBSOA  
z Fast Intrinsic Diode  
Weight  
TO-220  
TO-263  
3.0  
2.5  
g
g
z
Low RDS(ON) and QG  
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
(TJ = 25°C, Unless Otherwise Specified)  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250μA  
VDS = VGS, ID = - 250μA  
VGS = ± 15V, VDS = 0V  
VDS = VDSS, VGS = 0V  
- 65  
V
z
High-Side Switching  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
- 2.5  
- 4.5  
V
z
z
±50 nA  
z
IDSS  
- 3 μA  
-100 μA  
z
Current Regulators  
TJ = 125°C  
z
Battery Charger Applications  
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
45 mΩ  
DS99968B(01/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  

IXTP28P065T 替代型号

型号 品牌 替代类型 描述 数据表
IXTA28P065T IXYS

功能相似

Power Field-Effect Transistor, 28A I(D), 65V, 0.045ohm, 1-Element, P-Channel, Silicon, Met

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