Datasheet > IXTP32N65XM

IXTP32N65XM

更新时间： 2024-02-23 00:03:41

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	136K
描述
Power Field-Effect Transistor,

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中文翻译

获取价格

技术参数
数据手册

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IXTP32N65XM 技术参数

生命周期：	Transferred	Reach Compliance Code：	compliant
风险等级：	5.72	Base Number Matches：	1

IXTP32N65XM 数据手册

Preliminary Technical Information

X-Class

Power MOSFET

V_DSS= 650V

I_D25= 14A

IXTP32N65XM

R_DS(on) 135m

N-Channel Enhancement Mode

OVERMOLDED

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 150C

650

V_DGR

T_J= 25C to 150C, R_GS= 1M

V_GSS

V_GSM

Continuous

Transient

30

40

G = Gate

S = Source

D = Drain

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

dv/dt

P_D

I_S I_D25, V_DD V_DSS, T_J 150°C

T_C= 25C

V/ns

T_J

-55 ... +150

150

C

T_JM

T_stg

Features

-55 ... +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C



Low R_DS(ON)and Q_G

Low Package Inductance



M_d

Mounting Torque

1.13 / 10

2.5

Nm/lb.in

Weight

Advantages



High Power Density

Easy to Mount

Space Savings



Symbol

Test Conditions

Characteristic Values

Applications

(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max.



Switch-Mode and Resonant-Mode

Power Supplies

DC-DC Converters

PFC Circuits

AC and DC Motor Drives

Robotics and Servo Controls

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 250μA

V_GS= 30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

650



3.0

5.5



100 nA

A



I_DSS

T_J= 125C

50 A

R_DS(on)

V_GS= 10V, I_D= 16A, Note 1

135 m

DS100589D(6/15)

12 3 4 5

中文翻译

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