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IXTP3N60P PDF预览

IXTP3N60P

更新时间: 2024-11-06 14:56:07
品牌 Logo 应用领域
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页数 文件大小 规格书
7页 342K
描述
Polar?标准功率MOSFET经过专门定制,可为设计人员提供在性能和成本之间取得最佳平衡的器件解决方案。 这些器件纳入了Polar技术平台,以实现低导通电阻(RDS(ON))。 Polar标准M

IXTP3N60P 数据手册

 浏览型号IXTP3N60P的Datasheet PDF文件第2页浏览型号IXTP3N60P的Datasheet PDF文件第3页浏览型号IXTP3N60P的Datasheet PDF文件第4页浏览型号IXTP3N60P的Datasheet PDF文件第5页浏览型号IXTP3N60P的Datasheet PDF文件第6页浏览型号IXTP3N60P的Datasheet PDF文件第7页 
PolarTM  
Power MOSFET  
IXTY3N60P  
IXTA3N60P  
IXTP3N60P  
VDSS = 600V  
ID25 = 3A  
RDS(on) 2.9  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-252 (IXTY)  
G
S
D (Tab)  
TO-263 (IXTA)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
600  
600  
V
V
G
VDGR  
TJ = 25C to 150C, RGS = 1M  
S
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
D (Tab)  
TO-220 (IXTP)  
ID25  
IDM  
TC = 25C  
3
6
A
A
TC = 25C, Pulse Width Limited by TJM  
IA  
TC = 25C  
TC = 25C  
3
A
G
D
S
D (Tab)  
EAS  
100  
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
5
V/ns  
W
G = Gate  
S = Source  
D
= Drain  
70  
Tab = Drain  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
International Standard Packages  
Low QG  
Avalanche Rated  
Low Package Inductance  
Fast Intrinsic Rectifier  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220)  
10..65 / 2.2..14.6  
N/lb  
Nm/lb.in  
1.13 / 10  
Weight  
TO-252  
TO-263  
TO-220  
0.35  
2.50  
3.00  
g
g
g
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 50μA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
600  
V
V
3.0  
5.5  
DC-DC Converters  
Switch-Mode and Resonant-Mode  
100 nA  
A  
Power Supplies  
AC and DC Motor Drives  
IDSS  
5
Discharge Circiuts in Lasers, Spark  
Igniters, RF Generators  
TJ = 125C  
50 A  
  
High Voltage Pulse Power  
RDS(on)  
VGS = 10V, ID = 0.5 ID25, Note 1  
2.9  
Applications  
DS99449F(6/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  

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