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IXTP3N50P PDF预览

IXTP3N50P

更新时间: 2024-11-05 03:44:47
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
5页 237K
描述
PolarHV Power MOSFET

IXTP3N50P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.7
其他特性:AVALANCHE RATED雪崩能效等级(Eas):180 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (ID):3.6 A
最大漏源导通电阻:2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):8 A认证状态:Not Qualified
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXTP3N50P 数据手册

 浏览型号IXTP3N50P的Datasheet PDF文件第2页浏览型号IXTP3N50P的Datasheet PDF文件第3页浏览型号IXTP3N50P的Datasheet PDF文件第4页浏览型号IXTP3N50P的Datasheet PDF文件第5页 
PolarHVTM  
Power MOSFET  
IXTA 3N50P  
IXTP 3N50P  
IXTY 3N50P  
VDSS = 500 V  
ID25 = 3.6 A  
RDS(on) 2.0 Ω  
N-Channel Enhancement Mode  
Avalanche Rated  
Symbol  
VDSS  
VDGR  
Test Conditions  
TJ = 25° C to 150° C  
TJ = 25° C to 150° C; RGS = 1 MΩ  
Maximum Ratings  
TO-220 (IXTP)  
500  
500  
V
V
VGSS  
VGSM  
30  
40  
V
V
(TAB)  
G
D
S
ID25  
IDM  
TC =25° C  
TC = 25° C, pulse width limited by TJM  
3.6  
8
A
A
TO-263 (IXTA)  
IAR  
EAR  
EAS  
TC =25° C  
TC =25° C  
TC =25° C  
3
10  
180  
A
mJ  
mJ  
G
TO-252 (IXTY)  
G
S
dv/dt  
PD  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150° C, RG = 20 Ω  
,
10  
V/ns  
(TAB)  
TC =25° C  
70  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
S
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
(TAB)  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
Md  
Mounting torque  
(TO-220)  
1.13/10 Nm/lb.in.  
Weight  
TO-220  
TO-263  
TO-252  
4
3
0.8  
g
g
g
Features  
l
International standard packages  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
l
l
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 50µA  
500  
V
V
Advantages  
3.0  
5.5  
l
Easy to mount  
Space savings  
VGS  
=
30 VDC, VDS = 0  
100  
nA  
l
l
IDSS  
VDS = VDSS  
VGS = 0 V  
5
50  
µA  
µA  
High power density  
TJ = 125° C  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
2.0  
Pulse test, t 300 µs, duty cycle d 2 %  
© 2006 IXYS All rights reserved  
DS99200E(12/05)  

IXTP3N50P 替代型号

型号 品牌 替代类型 描述 数据表
IXTA3N50P IXYS

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PolarHV Power MOSFET
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