Datasheet > IXTP2N60P

IXTP2N60P

更新时间： 2024-09-28 03:44:47

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	141K
描述
PolarHV Power MOSFET

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中文翻译

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数据手册

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IXTP2N60P 数据手册

PolarHV^TM

Power MOSFET

IXTP 2N60P

IXTY 2N60P

V_DSS= 500 V

I_D252 A

R_DS(on)≤ 5.1 Ω

N-Channel Enhancement Mode

Avalanche Rated

Symbol

V_DSS

V_DGR

Test Conditions

T_J= 25° C to 150° C

T_J= 25° C to 150° C; R_GS= 1 MΩ

Maximum Ratings

TO-220 (IXTP)

600

V_GSS

V_GSM

Continuous

Transient

(TAB)

I_D25

I_DM

T_C=25° C

T_C= 25° C, pulse width limited by T_JM

I_AR

E_AR

E_AS

T_C=25° C

150

TO-252 AA (IXTY)

dv/dt

P_D

I_S≤I_DM, di/dt ≤100 A/µs, V_DD≤V_DSS

T_J≤150° C, R_G= 50 Ω

V/ns

T_C=25° C

(TAB)

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

G = Gate

S = Source

D = Drain

TAB = Drain

T_L

T_SOLD

1.6 mm (0.062 in.) from case for 10 s

Plastic body for 10 s

300

260

°C

M_d

Mounting torque

(TO-220)

1.13/10 Nm/lb.in.

Weight

TO-220

TO-252

0.8

Features

International standard packages

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Symbol

Test Conditions

Characteristic Values

(T_J= 25° C, unless otherwise specified)

Min. Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 25 µA

V_DS= V_GS, I_D= 250 µA

V_GS= 30 V, V_DS= 0 V

600

3.0

5.0

Advantages

I_DSS

V_DS= V_DSS

V_GS= 0 V

µA

Easy to mount

Space savings

High power density

T_J= 125° C

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

5.1

Ω

Pulse test, t ≤300 µs, duty cycle d ≤ 2 %

DS99422E(04/06)

12 3 4

中文翻译

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