Datasheet > IXTP24P085T

IXTP24P085T

更新时间： 2024-09-13 18:18:23

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
7页	199K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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IXTP24P085T 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	4.88
Base Number Matches：	1

IXTP24P085T 数据手册

TrenchP^TM

Power MOSFETs

IXTA24P085T

IXTP24P085T

V_DSS= - 85V

I_D25= - 24A

R_DS(on)

≤

65mΩ

P-Channel Enhancement Mode

Avalanche Rated

TO-263 AA (IXTA)

Symbol

V_DSS

Test Conditions

Maximum Ratings

D (Tab)

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

- 85

V_DGR

TO-220AB (IXTP)

V_GSS

V_GSM

Continuous

Transient

±15

±25

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

- 24

- 80

D (Tab)

= Drain

I_A

E_AS

T_C= 25°C

- 24

200

G = Gate

S = Source

Tab = Drain

P_D

T_C= 25°C

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

Features

^zInternational Standard Packages

^zAvalanche Rated

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

^zExtended FBSOA

M_d

Mounting Torque (TO-220)

1.13/10

Nm/lb.in.

^zFast Intrinsic Diode

Weight

TO-220

TO-263

3.0

2.5

Low R_DS(ON)and Q_G

Advantages

Easy to Mount

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values

Min. Typ. Max.

Applications

(T_J= 25°C, Unless Otherwise Specified)

High-Side Switching

Push Pull Amplifiers

DC Choppers

Automatic Test Equipment

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= - 250μA

V_DS= V_GS, I_D= - 250μA

V_GS= ±15V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

- 85

- 2.5

- 4.5

±50 nA

Current Regulators

I_DSS

- 3 μA

-100 μA

Battery Charger Applications

T_J= 125°C

R_DS(on)

V_GS= -10V, I_D= 0.5 • I_D25, Note 1

65 mΩ

DS99969B(01/13)

12 3 4 5 6 7

中文翻译

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