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IXTP260N055T2 PDF预览

IXTP260N055T2

更新时间: 2024-09-13 20:11:07
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
6页 244K
描述
Power Field-Effect Transistor, 260A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN

IXTP260N055T2 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:8.55其他特性:AVALANCHE RATED
雪崩能效等级(Eas):600 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:55 V
最大漏极电流 (Abs) (ID):260 A最大漏极电流 (ID):260 A
最大漏源导通电阻:0.0033 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):480 W最大脉冲漏极电流 (IDM):780 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXTP260N055T2 数据手册

 浏览型号IXTP260N055T2的Datasheet PDF文件第2页浏览型号IXTP260N055T2的Datasheet PDF文件第3页浏览型号IXTP260N055T2的Datasheet PDF文件第4页浏览型号IXTP260N055T2的Datasheet PDF文件第5页浏览型号IXTP260N055T2的Datasheet PDF文件第6页 
TrenchT2TM  
PowerMOSFET  
IXTA260N055T2  
IXTP260N055T2  
VDSS = 55V  
ID25 = 260A  
RDS(on) 3.3mΩ  
N-Channel Enhancement Mode  
AvalancheRated  
TO-263(IXTA)  
Symbol  
VDSS  
TestConditions  
MaximumRatings  
G
S
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
55  
55  
V
V
(TAB)  
VDGR  
VGSM  
Transient  
±20  
V
TO-220(IXTP)  
ID25  
TC =25°C  
Lead Current Limit, RMS  
TC = 25°C, Pulse Width Limited by TJM  
260  
120  
780  
A
A
A
ILRMS  
IDM  
G
D
IA  
TC =25°C  
TC =25°C  
TC =25°C  
100  
600  
480  
A
mJ  
W
(TAB)  
S
EAS  
PD  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +175  
TL  
Tsold  
1.6mm (0.062in.) from Case for 10s  
Plastic Body for 10 Seconds  
300  
260  
°C  
°C  
International Standard Packages  
175°C Operating Temperature  
High Current Handling Capability  
AvalancheRated  
Md  
Mounting Torque (TO-220)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Low RDS(on)  
Advantages  
Easy to Mount  
SpaceSavings  
High Power Density  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C uUnless Otherwise Specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ± 20V, VDS = 0V  
55  
V
V
Applications  
2.0  
4.0  
Automotive Engine Drive  
±200 nA  
μA  
Synchronous Buck Converter  
IDSS  
VDS = VDSS  
VGS = 0V  
5
DC and DC Converters  
TJ = 150°C  
150 μA  
3.3 mΩ  
High Current Switching Applications  
Power Train Management  
RDS(on)  
VGS = 10V, ID = 50A, Notes 1, 2  
Distributed Power Architecture  
DS100028A(01/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  

IXTP260N055T2 替代型号

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TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 2A I(D) | TO-220AB