型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTH15N50L2 | IXYS |
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Power Field-Effect Transistor, 15A I(D), 500V, 0.48ohm, 1-Element, N-Channel, Silicon, Met | |
IXTH15N50L2 | LITTELFUSE |
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这些独特的器件专为需要功率MOSFET以在电流饱和区工作的应用,具有低热阻、高功率密度和正 | |
IXTH15N55 | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH15N60 | IXYS |
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Power Field-Effect Transistor, 15A I(D), 600V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta | |
IXTH15N65 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 15A I(D) | TO-218VAR | |
IXTH15N70 | INTERFET |
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N-Channel Enhancement Mode | |
IXTH15P15 | ETC |
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TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 15A I(D) | TO-218VAR | |
IXTH15P20 | ETC |
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TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-218VAR | |
IXTH160N075T | IXYS |
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Power Field-Effect Transistor, 160A I(D), 75V, 0.006ohm, 1-Element, N-Channel, Silicon, Me | |
IXTH160N075T | LITTELFUSE |
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沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(ON)极低,因此确保了非常低 |