Datasheet > IXTH16N20D2

IXTH16N20D2

更新时间： 2024-09-14 14:56:15

品牌	Logo	应用领域
力特 - LITTELFUSE		栅栅极
页数	文件大小	规格书
6页	186K
描述
不同于增强型MOSFET，这些耗尽型器件在“常开”模式下运行，因此栅极引出线处需要的开启电压为零。凭借高达1700V的阻断电压和较低的漏极到源极电阻，这些器件在持续“开启”的系统（例如紧急警报或

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技术参数
数据手册

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IXTH16N20D2 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.74
Base Number Matches：	1

IXTH16N20D2 数据手册

Depletion Mode

MOSFET

V_DSX= 200V

I_D(on)> 16A

IXTT16N20D2

IXTH16N20D2

R_DS(on)



80m

N-Channel

TO-268 (IXTT)

D (Tab)

TO-247 (IXTH)

Symbol

V_DSX

Test Conditions

Maximum Ratings

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

200

V_DGX

V_GSX

V_GSM

Continuous

Transient

20

30

D (Tab)

P_D

T_C= 25C

695

G = Gate

S = Source

= Drain

T_J

T_JM

T_stg

- 55 ... +150

150

- 55 ... +150

C

Tab = Drain

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

M_d

Mounting Torque (TO-247)

1.13 / 10

Nm/lb.in.

Features

Weight

TO-268

TO-247

• Normally ON Mode

• International Standard Packages

• Molding Epoxies Meet UL94V-0

Flammability Classification

Advantages

Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

• Easy to Mount

• Space Savings

• High Power Density

BV_DSX

V_GS(off)

I_GSX

V_GS= - 5V, I_D= 250A

V_DS= 25V, I_D= 4mA

V_GS= 20V, V_DS= 0V

V_DS= V_DSX, V_GS= - 5V

200

- 2.0

- 4.5

Applications

100 nA

A

• Audio Amplifiers

• Start-up Circuits

• Protection Circuits

• Ramp Generators

• Current Regulators

• Active Loads

I_DSX(off)

T_J= 125C

100  A

80 m

R_DS(on)

I_D(on)

V_GS= 0V, I_D= 8A, Note 1

V_GS= 0V, V_DS= 25V, Note 1

DS100260E(4/17)

12 3 4 5 6

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