Datasheet > IXTH160N075T

IXTH160N075T

更新时间： 2024-09-14 14:56:39

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网栅开关脉冲晶体管
页数	文件大小	规格书
6页	264K
描述
沟槽栅功率MOSFET适用于低电压/高电流应用，所需的RDS(ON)极低，因此确保了非常低的功率耗损。再结合广泛的工作结温范围（从-40 °C到175 °C），这些产品非常适合汽车应用以及其他处

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中文翻译

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数据手册

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IXTH160N075T 数据手册

Preliminary Technical Information

TrenchMV^TM

Power MOSFET

IXTH160N075T

IXTQ160N075T

V_DSS= 75

I_D25= 160

R_DS(on)≤ 6.0 mΩ

N-ChannelEnhancementMode

AvalancheRated

Symbol

TestConditions

Maximum Ratings

TO-247 (IXTH)

V_DSS

V_DGR

T_J= 25°C to 175°C

T_J= 25°C to 175°C; R_GS= 1 MΩ

V_GSM

Transient

± 20

I_D25

I_LRMS

I_DM

T_C= 25°C

Lead Current Limit, RMS

T_C= 25°C, pulse width limited by T_JM

160

430

D (TAB)

I_AR

E_AS

T_C= 25°C

750

TO-3P (IXTQ)

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/ms, V_DD≤ V_DSS

T_J≤ 175°C, R_G= 5 Ω

V/ns

P_D

T_C= 25°C

360

T_J

T_JM

T_stg

-55 ... +175

175

-55 ... +175

°C

D (TAB)

T_L

T_SOLD

1.6 mm (0.062 in.) from case for 10 s

Plastic body for 10 seconds

300

260

°C

G = Gate

S = Source

D = Drain

TAB = Drain

M_d

Mounting torque (TO-3P, TO-220)

1.13 / 10 Nm/lb.in.

Features

Weight

TO-3P

TO-247

5.5

^ꢀUltra-low On Resistance

^ꢀUnclamped Inductive Switching (UIS)

rated

^ꢀLow package inductance

- easy to drive and to protect

^ꢀ175 °C Operating Temperature

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C unless otherwise specified)

Min. Typ.

Max.

Advantages

ꢀ

Easy to mount

BV_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 μA

V_DS= V_GS, I_D= 250 μA

V_GS= ± 20 V, V_DS= 0 V

ꢀ

Space savings

ꢀ

High power density

2.0

4.0

± 200

Applications

ꢀ

Automotive

I_DSS

V_DS= V_DSS

V_GS= 0 V

μA

- Motor Drives

- 42V Power Bus

T_J= 150°C

250

- ABS Systems

R_DS(on)

V_GS= 10 V, I_D= 25 A, Notes 1, 2

4.8

6.0 mΩ

ꢀ

DC/DC Converters and Off-line UPS

ꢀ

Primary Switch for 24V and 48V

Systems

ꢀ

High Current Switching

Applications

DS99690 (11/06)

12 3 4 5 6

中文翻译

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