PolarPTM
Power MOSFETs
VDSS = - 600V
ID25 = - 16A
IXTH16P60P
IXTT16P60P
RDS(on)
≤
720mΩ
P-Channel Enhancement Mode
Avalanche Rated
TO-268 (IXTT)
G
S
D (Tab)
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
- 600
- 600
V
V
TO-247 (IXTH)
VDGR
VGSS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
- 16
- 48
A
A
G
D
S
D (Tab)
IA
TC = 25°C
TC = 25°C
- 16
2.5
A
J
G = Gate
D
= Drain
EAS
S = Source
Tab = Drain
dv/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
10
V/ns
W
460
TJ
TJM
Tstg
- 55 ... +150
150
- 55 ... +150
°C
°C
°C
Features
z International Standard Packages
z Avalanche Rated
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
z Rugged PolarPTM Process
z Fast intrinsic Diode
Md
Mounting Torque (TO-247)
1.13 / 10
Nm/lb.in.
z Low Package Inductance
Weight
TO-268
TO-247
4
6
g
g
Advantages
z
Easy to Mount
Space Savings
High Power Density
z
Symbol
Test Conditions
Characteristic Values
z
(TJ = 25°C, Unless Otherwise Specified)
Min.
- 600
- 2.0
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = - 250μA
VDS = VGS, ID = - 250μA
VGS = ±20V, VDS = 0V
VDS = VDSS, VGS = 0V
V
V
Applications
- 4.0
z
High-Side Switches
Push-Pull Amplifiers
DC Choppers
Current Regulators
±100 nA
z
z
IDSS
- 25 μA
z
TJ = 125°C
- 200 μA
z
Automatic Test Equipment
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
720 mΩ
DS99988B(01/13)
© 2013 IXYS CORPORATION, All Rights Reserved