是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.84 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 15 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e0 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 200 W | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTH15N50A | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 15A I(D) | TO-247 | |
IXTH15N50L2 | IXYS |
获取价格 |
Power Field-Effect Transistor, 15A I(D), 500V, 0.48ohm, 1-Element, N-Channel, Silicon, Met | |
IXTH15N50L2 | LITTELFUSE |
获取价格 |
这些独特的器件专为需要功率MOSFET以在电流饱和区工作的应用,具有低热阻、高功率密度和正 | |
IXTH15N55 | IXYS |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH15N60 | IXYS |
获取价格 |
Power Field-Effect Transistor, 15A I(D), 600V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta | |
IXTH15N65 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 15A I(D) | TO-218VAR | |
IXTH15N70 | INTERFET |
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N-Channel Enhancement Mode | |
IXTH15P15 | ETC |
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TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 15A I(D) | TO-218VAR | |
IXTH15P20 | ETC |
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TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-218VAR | |
IXTH160N075T | IXYS |
获取价格 |
Power Field-Effect Transistor, 160A I(D), 75V, 0.006ohm, 1-Element, N-Channel, Silicon, Me |