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IXGP20N120A3 PDF预览

IXGP20N120A3

更新时间: 2024-11-24 11:14:11
品牌 Logo 应用领域
IXYS 晶体晶体管功率控制瞄准线双极性晶体管局域网
页数 文件大小 规格书
6页 234K
描述
GenX3 1200V IGBTs

IXGP20N120A3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:8.38Is Samacsys:N
其他特性:LOW CONDUCTION LOSS外壳连接:COLLECTOR
最大集电极电流 (IC):40 A集电极-发射极最大电压:1200 V
配置:SINGLE门极发射器阈值电压最大值:5 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):180 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):1530 ns标称接通时间 (ton):66 ns
Base Number Matches:1

IXGP20N120A3 数据手册

 浏览型号IXGP20N120A3的Datasheet PDF文件第2页浏览型号IXGP20N120A3的Datasheet PDF文件第3页浏览型号IXGP20N120A3的Datasheet PDF文件第4页浏览型号IXGP20N120A3的Datasheet PDF文件第5页浏览型号IXGP20N120A3的Datasheet PDF文件第6页 
GenX3TM 1200V IGBTs  
VCES = 1200V  
IC110 = 20A  
VCE(sat) 2.5V  
IXGA20N120A3  
IXGP20N120A3  
IXGH20N120A3  
Ultra-Low Vsat PT IGBTs for  
up to 3 kHz Switching  
TO-263 AA (IXGA)  
G
E
C (Tab)  
Symbol  
Test Conditions  
Maximum Ratings  
TO-220AB (IXGP)  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
1200  
1200  
V
V
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
C (Tab)  
E
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1ms  
40  
20  
A
A
A
TO-247 (IXGH)  
120  
SSOA  
(RBSOA)  
VGE= 15V, TJ = 125°C, RG = 10Ω  
Clamped Inductive Load  
ICM = 40  
A
V
@VCE 960  
PC  
TC = 25°C  
180  
W
G
C
E
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
C (Tab)  
-55 ... +150  
G = Gate  
C
= Collector  
E = Emitter  
Tab = Collector  
Md  
FC  
Mounting Torque (TO-247 & TO-220)  
Mounting Force (TO-263)  
1.13/10  
10..65 / 2.2..14.6  
Nm/lb.in.  
N/lb.  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6mm (0.062 in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
z Optimized for Low Conduction Losses  
z International Standard Packages  
Advantages  
z High Power Density  
z Low Gate Drive Requirement  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1200  
2.5  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
z Power Inverters  
z UPS  
5.0  
V
25 μA  
z Motor Drives  
z SMPS  
TJ = 125°C  
TJ = 125°C  
1
±100  
2.5  
mA  
nA  
z PFC Circuits  
IGES  
VCE = 0V, VGE = ±20V  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
z Inrush Current Protection Circuits  
VCE(sat)  
IC = 20A, VGE = 15V, Note 1  
2.3  
2.5  
V
V
DS100046A(11/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  

IXGP20N120A3 替代型号

型号 品牌 替代类型 描述 数据表
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