5秒后页面跳转
IXGP12N60C PDF预览

IXGP12N60C

更新时间: 2024-11-19 23:15:07
品牌 Logo 应用领域
IXYS 双极性晶体管
页数 文件大小 规格书
4页 98K
描述
HiPerFAST IGBT

IXGP12N60C 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.81
其他特性:FAST外壳连接:COLLECTOR
最大集电极电流 (IC):20 A集电极-发射极最大电压:600 V
配置:SINGLE最大降落时间(tf):180 ns
门极发射器阈值电压最大值:5 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):100 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):170 ns
标称接通时间 (ton):40 nsBase Number Matches:1

IXGP12N60C 数据手册

 浏览型号IXGP12N60C的Datasheet PDF文件第2页浏览型号IXGP12N60C的Datasheet PDF文件第3页浏览型号IXGP12N60C的Datasheet PDF文件第4页 
V
I
V
= 600 V  
= 24 A  
= 2.7 V  
HiPerFASTTM IGBT  
IXGA 12N60C  
IXGP 12N60C  
CES  
C25  
t CE(sat)= 55 ns  
fi(typ)  
Symbol  
Test Conditions  
Maximum Ratings  
TO-263 AA (IXGA)  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
G
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
C (tab)  
E
IC25  
IC90  
ICM  
TC = 25°C  
24  
12  
48  
A
A
A
TO-220 AB  
(IXGP)  
TC = 90°C  
TC = 25°C, 1 ms  
SSOA  
VGE = 15 V, TVJ = 125°C, RG = 33 Ω  
Clamped inductive load, L = 300 µH  
ICM = 24  
A
(RBSOA)  
@ 0.8 VCES  
G
C
E
PC  
TC = 25°C  
100  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
G = Gate  
E =Emitter  
C
= Collector  
TAB = Collector  
TJM  
Tstg  
-55 ... +150  
Md  
Mounting torque with screw M3  
Mounting torque with screw M3.5  
0.45/4 Nm/lb.in.  
0.55/5 Nm/lb.in.  
Weight  
4
g
Features  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Very high freqency IGBT  
New generation HDMOSTM process  
International standard package  
JHEigDhEpCeTaOk -c2u2r0reAnBt ahnadndTlOin-g26ca3pAaAbility  
Applications  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
PFC circuits  
AC motor speed control  
DC servo & robot drives  
Switch-mode and resonant-mode  
BVCES  
VGE(th)  
IC = 250 µA, VGE = 0 V  
IC = 250 µA, VGE = VGE  
600  
2.5  
V
V
5.0  
pHoigwherposwueprplaieusdio amplifiers  
ICES  
VCE = 0.8, VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
200  
1
µA  
mA  
Advantages  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
V
Fast switching speed  
High power density  
VCE(sat)  
IC = ICE90, VGE = 15  
2.1  
2.7  
97534B (2/02)  
© 2002 IXYS All rights reserved  

与IXGP12N60C相关器件

型号 品牌 获取价格 描述 数据表
IXGP12N60CD1 IXYS

获取价格

HiPerFAST IGBT Lightspeed Series
IXGP12N60U1 IXYS

获取价格

Low VCE(sat) IGBT with Diode Combi Pack
IXGP14N120B IXYS

获取价格

IGBT Optimized for switching up to 35 KHz
IXGP15N100B LITTELFUSE

获取价格

Insulated Gate Bipolar Transistor, 30A I(C), N-Channel, TO-220AB,
IXGP15N100C IXYS

获取价格

IGBT Lightspeed Series
IXGP15N120B IXYS

获取价格

HiPerFAST IGBT
IXGP15N120B2 IXYS

获取价格

Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, TO-220AB
IXGP15N120C IXYS

获取价格

HiPerFAST IGBT
IXGP16N60B2 IXYS

获取价格

HiPerFAST IGBTs B2-Class High Speed
IXGP16N60B2D1 IXYS

获取价格

HiPerFAST IGBTs B2-Class High Speed w/ Diode