Datasheet > IXGP16N60B2D1

IXGP16N60B2D1

更新时间： 2024-12-01 14:56:47

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
8页	289K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

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中文翻译

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数据手册

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IXGP16N60B2D1 数据手册

HiPerFAST^TMIGBTs

B2-Class High Speed

w/ Diode

V_CES= 600V

I_C110= 16A

V_CE(sat)≤ 1.95V

t_fi(typ)= 70ns

IXGA16N60B2D1

IXGP16N60B2D1

IXGH16N60B2D1

TO-263 AA (IXGA)

C (Tab)

Symbol

Test Conditions

Maximum Ratings

TO-220AB (IXGP)

V_CES

V_CGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GE= 1MΩ

600

V_GES

V_GEM

Continuous

Transient

±20

±30

C (Tab)

I_C25

T_C= 25°C (Chip Capability)

I_C110

I_F110

T_C= 110°C

TO-247 (IXGH)

I_CM

T_C= 25°C, 1ms

100

SSOA

V_GE= 15V, T_J= 125°C, R_G= 22Ω

I_CM= 32

(RBSOA)

Clamped Inductive load

V_CE≤ V_CES

P_C

T_C= 25°C

150

C (Tab)

T_J

T_JM

T_stg

-55 ... +150

150

°C

G = Gate

E = Emitter

= Collector

Tab = Collector

-55 ... +150

M_d

F_C

Mounting Torque (TO-220 & TO-247)

Mounting Force (TO-263)

1.13/10

10..65 / 2.2..14.6

Nm/lb.in.

N/lb.

Features

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6mm (0.062 in.) from Case for 10s

300

260

°C

Optimized for Low Conduction and

Switching Losses

Square RBSOA

Anti-Parallel Ultra Fast Diode

International Standard Packages

Weight

TO-263

TO-220

TO-247

2.5

3.0

6.0

Advantages

High Power Density

Low Gate Drive Requirement

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

Applications

V_GE(th)

I_CES

I_C= 250μA, V_CE= V_GE

3.0

5.5

Power Inverters

UPS

V_CE= V_CES,V_GE= 0V

25 μA

1 mA

T_J= 125°C

Motor Drives

SMPS

PFC Circuits

Battery Chargers

Welding Machines

Lamp Ballasts

I_GES

V_CE= 0V, V_GE= ±20V

±100 nA

V_CE(sat)

I_C= 12A, V_GE= 15V, Note1

1.95

1.65

DS99178C(03/13)

12 3 4 5 6 7 8

中文翻译

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