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IXFC13N50 PDF预览

IXFC13N50

更新时间: 2024-01-25 11:54:00
品牌 Logo 应用领域
IXYS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
2页 509K
描述
HiPerFET MOSFET ISOPLUS220

IXFC13N50 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:End Of Life包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:compliant
风险等级:5.72Is Samacsys:N
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (ID):12 A
最大漏源导通电阻:0.4 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):48 A
认证状态:Not Qualified表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFC13N50 数据手册

 浏览型号IXFC13N50的Datasheet PDF文件第2页 
ADVANCED TECHNICAL INFORMATION  
HiPerFETTM MOSFET  
IXFC13N50 VDSS = 500 V  
ISOPLUS220TM  
ID25  
RDS(on) = 0.4 Ω  
250 ns  
= 12 A  
Electrically Isolated Back Surface  
N-ChannelEnhancementMode  
t
rr  
Highdv/dt, Lowtrr,HDMOSTM Family  
ISOPLUS 220TM  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
500  
500  
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
G
D
S
VGS  
Continuous  
Transient  
20  
30  
V
V
Isolated back surface*  
D = Drain  
VGSM  
ID25  
IDM  
IAR  
TC = 25°C  
12  
48  
13  
A
A
A
G = Gate  
S = Source  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
Features  
EAR  
TC = 25°C  
18  
5
mJ  
z
Silicon chip on Direct-Copper-Bond  
substrate  
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
,
V/ns  
- High power dissipation  
-Isolatedmountingsurface  
-2500Velectricalisolation  
PD  
TC = 25°C  
140  
W
z
z
z
z
Lowdraintotabcapacitance(<35pF)  
Low RDS (on) HDMOSTM process  
Ruggedpolysilicongatecellstructure  
UnclampedInductiveSwitching(UIS)  
rated  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
TL  
1.6 mm (0.062 in.) from case for 10 s  
300  
3
°C  
z
FastintrinsicRectifier  
Weight  
g
Applications  
z
DC-DC converters  
Batterychargers  
z
z
Switched-modeandresonant-mode  
Symbol  
TestConditions  
Characteristic Values  
power supplies  
z
(TJ = 25°C, unless otherwise specified)  
DC choppers  
z
min. typ. max.  
ACmotorcontrol  
VDSS  
VGS = 0 V, ID = 250 µA  
500  
2
V
V
Advantages  
VGS(th)  
VDS = VGS, ID = 2.5 mA  
4
z
Easyassembly:noscrewsorisolation  
foilsrequired  
IGSS  
IDSS  
VGS = 20 VDC, VDS = 0  
100  
nA  
z
Space savings  
High power density  
Lowcollectorcapacitancetoground  
(low EMI)  
z
VDS = 0.8 • VDSS  
VGS = 0 V  
T = 25°C  
200 µA  
TJJ = 125°C  
1
mA  
z
RDS(on)  
V
= 10 V, ID = IT  
0.4  
NoGStes 1, 2  
See IXFH13N50 data sheet for  
characteristiccurves  
© 2003 IXYS All rights reserved  
DS98756(7/03)  

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