Datasheet > IRLMS1503_05

IRLMS1503_05

更新时间： 2024-10-30 04:23:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	151K
描述
HEXFET㈢ Power MOSFET

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中文翻译

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数据手册

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IRLMS1503_05 数据手册

PD - 95762

IRLMS1503PbF

HEXFET^®Power MOSFET

^lGeneration V Technology

l Micro6 Package Style

l Ultra Low R_DS(on)

l N-Channel MOSFET

l Lead-Free

V_DSS= 30V

_DS(on)= 0.10Ω

Description

Top View

Fifth Generation HEXFET^®power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance

per silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that

HEXFET^®power MOSFETs are well known for,

provides the designer with an extremely efficient and

reliable device for use in a wide variety of applications.

The Micro6™ package with its customized leadframe

produces a HEXFET^®power MOSFET with R_DS(on)

60% less than a similar size SOT-23. This package is

idealforapplicationswhereprintedcircuitboardspace

isatapremium. It'suniquethermaldesignandR_DS(on)

reduction enables a current-handling increase of

nearly 300% compared to the SOT-23.

Micro6™

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

3.2

2.6

P_D@T_A= 25°C

Power Dissipation

1.7

mW/°C

Linear Derating Factor

V_GS

Gate-to-Source Voltage

± 20

dv/dt

T_J,T_STG

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

5.0

V/ns

°C

-55 to + 150

Thermal Resistance Ratings

Parameter

Min.

Typ.

Max

Units

R_θJA

Maximum Junction-to-Ambient

°C/W

www.irf.com

1/14/05

12 3 4 5 6 7 8

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