IRLML6402TR

更新时间： 2024-10-29 22:23:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	133K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册
替代型号

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IRLML6402TR 数据手册

PD - 93755B

IRLML6402

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l P-Channel MOSFET

l SOT-23 Footprint

l Low Profile (<1.1mm)

l Available in Tape and Reel

l Fast Switching

V_DSS= -20V

R_DS(on)= 0.065Ω

Description

These P-Channel MOSFETs from International Rectifier utilize

advanced processing techniques to achieve extremely low on-

resistance per silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that HEXFET^

power MOSFETs are well known for, provides the designer with

an extremely efficient and reliable device for use in battery and

load management.

Athermallyenhancedlargepadleadframehasbeenincorporated

into the standard SOT-23 package to produce a HEXFET Power

MOSFET with the industry's smallest footprint. This package,

dubbed the Micro3, is ideal for applications where printed

circuit board space is at a premium. The low profile (<1.1mm)

of the Micro3 allows it to fit easily into extremely thin application

environments such as portable electronics and PCMCIA cards.

The thermal resistance and power dissipation are the best

available.

Micro3

Absolute Maximum Ratings

Parameter

Drain- Source Voltage

Max.

-20

Units

V_DS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

-3.7

-2.2

-22

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

1.3

Power Dissipation

0.8

Linear Derating Factor

0.01

W/°C

E_AS

Single Pulse Avalanche Energy

Gate-to-Source Voltage

V_GS

± 12

-55 to + 150

T_J,T_STG

Junction and Storage Temperature Range

°C

Thermal Resistance

Parameter

Typ.

Max.

Units

R_θJA

Maximum Junction-to-Ambient

100

°C/W

www.irf.com

04/29/03

12 3 4 5 6 7...9

中文翻译

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IRLML6402TR 替代型号

型号	品牌	替代类型	描述	数据表
IRLML6402TRPBF	INFINEON	类似代替	Ultra Low On-Resistance

与IRLML6402TR相关器件

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IRLML6402TRPBF	INFINEON	获取价格	Ultra Low On-Resistance
IRLML6402TRPBF	TYSEMI	获取价格	HEXFET Power MOSFET
IRLML6402TRPBF-1	INFINEON	获取价格	Small Signal Field-Effect Transistor
IRLML9301	INFINEON	获取价格	The StrongIRFET™ power MOSFET family is optim
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IRLML9301PBF_15	INFINEON	获取价格	Compatible with existing Surface Mount Techniques
IRLML9301TR	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C
IRLML9301TRPBF	TYSEMI	获取价格	RoHS compliant containing no lead, no bromide and no halogen Environmentally friendly
IRLML9301TRPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRLML9303	INFINEON	获取价格	The StrongIRFET™ power MOSFET family is optim