Datasheet > IRLML9301TR

IRLML9301TR

更新时间： 2024-10-15 17:15:55

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	417K
描述
种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-3.6A;Vgs(th)(V):±20;漏源导通电阻:65mΩ@-4.5V

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数据手册

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IRLML9301TR 数据手册

UMW

IRLML9301

P−CHANNEL MOSFET

FEATURES

SOT–23

VDS (V) = -30V

RDS(ON)

64m (V GS = -10V)

103m

(V GS = -4.5V)

Application(s)

1. GATE

2. SOURCE

3. DRAIN

• System/Load Switch

Benefits

Lower switching losses

Multi-vendor compatibility

Easier manufacturing

Environmentally friendly

Increased reliability

Symbol

Parameter

Drain-Source Voltage

Max.

-30

Units

V_DS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

-3.6

-2.9

-15

Pulsed Drain Current

P_D@T_A= 25°C

P_D@T_A= 70°C

1.3

Maximum Power Dissipation

Linear Derating Factor

0.8

0.01

W/°C

V_GS

± 20

Gate-to-Source Voltage

T_J,T_STG

-55 to + 150

Junction and Storage Temperature Range

°C

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

R_θJA

100

Junction-to-Ambient

°C/W

R_θJA

Junction-to-Ambient (t<10s)

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Pulse width ≤ 400μs; duty cycle ≤ 2%.

Surface mounted on 1 in square Cu board

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7 8

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