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IRLML9301PBF PDF预览

IRLML9301PBF

更新时间: 2024-11-19 01:20:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 200K
描述
Compatible with existing Surface Mount Techniques

IRLML9301PBF 数据手册

 浏览型号IRLML9301PBF的Datasheet PDF文件第2页浏览型号IRLML9301PBF的Datasheet PDF文件第3页浏览型号IRLML9301PBF的Datasheet PDF文件第4页浏览型号IRLML9301PBF的Datasheet PDF文件第5页浏览型号IRLML9301PBF的Datasheet PDF文件第6页浏览型号IRLML9301PBF的Datasheet PDF文件第7页 
PD - 96310C  
IRLML9301TRPbF  
HEXFET® Power MOSFET  
VDS  
-30  
V
V
VGS Max  
± 20  
G
1
RDS(on) max  
(@VGS = -10V)  
64  
3 D  
m
Ω
2
RDS(on) max  
(@VGS = -4.5V)  
S
TM  
103  
m
Micro3 (SOT-23)  
Ω
IRLML9301TRPbF  
Application(s)  
System/Load Switch  
Features and Benefits  
Features  
Benefits  
Low RDS(on) ( 64mΩ)  
Industry-standard pinout  
Lower switching losses  
Multi-vendor compatibility  
Compatible with existing Surface Mount Techniques  
results in Easier manufacturing  
Environmentally friendly  
Increased reliability  
RoHS compliant containing no lead, no bromide and no halogen  
MSL1, Consumer qualification  
Symbol  
Parameter  
Drain-Source Voltage  
Max.  
Units  
V
VDS  
-30  
-3.6  
-2.9  
-15  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
A
Pulsed Drain Current  
PD @TA = 25°C  
PD @TA = 70°C  
1.3  
Maximum Power Dissipation  
Maximum Power Dissipation  
Linear Derating Factor  
W
0.8  
0.01  
± 20  
W/°C  
V
VGS  
Gate-to-Source Voltage  
TJ, TSTG  
-55 to + 150  
Junction and Storage Temperature Range  
°C  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
Max.  
100  
Units  
RθJA  
Junction-to-Ambient  
°C/W  
RθJA  
–––  
99  
Junction-to-Ambient (t<10s)  
ORDERING INFORMATION:  
See detailed ordering and shipping information on the last page of this data sheet.  
Notes  through „ are on page 10  
www.irf.com  
1
02/09/12  

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