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IRLML6402TRPBF-1 PDF预览

IRLML6402TRPBF-1

更新时间: 2024-11-18 21:16:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 220K
描述
Small Signal Field-Effect Transistor

IRLML6402TRPBF-1 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.29配置:Single
最大漏极电流 (Abs) (ID):4.3 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e3湿度敏感等级:1
最高工作温度:150 °C峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):1.3 W
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

IRLML6402TRPBF-1 数据手册

 浏览型号IRLML6402TRPBF-1的Datasheet PDF文件第2页浏览型号IRLML6402TRPBF-1的Datasheet PDF文件第3页浏览型号IRLML6402TRPBF-1的Datasheet PDF文件第4页浏览型号IRLML6402TRPBF-1的Datasheet PDF文件第5页浏览型号IRLML6402TRPBF-1的Datasheet PDF文件第6页浏览型号IRLML6402TRPBF-1的Datasheet PDF文件第7页 
IRLML6402PbF-1  
HEXFET® Power MOSFET  
VDS  
-20  
0.065  
8.0  
V
Ω
RDS(on) max  
(@VGS = -4.5V)  
Qg (typical)  
G
S
1
2
nC  
A
3
D
ID  
-3.7  
(@TA = 25°C)  
Micro3(SOT-23)  
Features  
Benefits  
Industry-standard pinout SOT-23 Package  
Compatible with Existing Surface Mount Techniques  
RoHS Compliant, Halogen-Free  
Multi-Vendor Compatibility  
Easier Manufacturing  
Environmentally Friendlier  
Increased Reliability  
MSL1, Industrial qualification  
Standard Pack  
Base Part Number  
Package Type  
Micro3 (SOT-23)  
Orderable Part Number  
IRLML6402TRPbF-1  
Form  
Quantity  
3000  
IRLML6402TRPbF-1  
Tape and Reel  
AbsoluteMaximumRatings  
Parameter  
Drain- Source Voltage  
Max.  
-20  
Units  
V
VDS  
ID @ TA = 25°C  
ID @ TA= 70°C  
IDM  
Continuous Drain Current, VGS @ -4.5V  
Continuous Drain Current, VGS @ -4.5V  
Pulsed Drain Current   
-3.7  
-2.2  
-22  
A
PD @TA = 25°C  
PD @TA = 70°C  
Power Dissipation  
1.3  
W
Power Dissipation  
0.8  
Linear Derating Factor  
0.01  
11  
W/°C  
mJ  
V
EAS  
Single Pulse Avalanche Energy„  
Gate-to-Source Voltage  
VGS  
± 12  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
°C  
Thermal Resistance  
Parameter  
Typ.  
Max.  
Units  
RθJA  
Maximum Junction-to-Ambientƒ  
75  
100  
°C/W  
1
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November 25, 2013  

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