5秒后页面跳转
捷配首页

Datasheet > IRHNA67160SCS
IRHNA67160SCS PDF预览

IRHNA67160SCS

更新时间： 2024-09-15 19:45:15
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
9页 188K
描述
Power Field-Effect Transistor, 56A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

阅读下载

中文翻译

获取价格

IRHNA67160SCS 技术参数

生命周期：Active包装说明：CHIP CARRIER, R-CBCC-N3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.69雪崩能效等级（Eas）：462 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：100 V最大漏极电流 (ID)：56 A
最大漏源导通电阻：0.01 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-CBCC-N3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：CHIP CARRIER极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：224 A参考标准：RH - 100K Rad(Si)
表面贴装：YES端子形式：NO LEAD
端子位置：BOTTOM晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRHNA67160SCS 数据手册

 浏览型号IRHNA67160SCS的Datasheet PDF文件第2页浏览型号IRHNA67160SCS的Datasheet PDF文件第3页浏览型号IRHNA67160SCS的Datasheet PDF文件第4页浏览型号IRHNA67160SCS的Datasheet PDF文件第5页浏览型号IRHNA67160SCS的Datasheet PDF文件第6页浏览型号IRHNA67160SCS的Datasheet PDF文件第7页 
PD-94299C  
2N7579U2  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (SMD-2)  
IRHNA67160  
100V, N-CHANNEL  
TECHNOLOGY  
Product Summary  
Part Number  
IRHNA67160  
IRHNA63160  
Radiation Level RDS(on)  
ID  
100K Rads (Si)  
300K Rads (Si)  
0.010Ω 56A*  
0.010Ω 56A*  
SMD-2  
International Rectifier’s R6TM technology provides  
superior power MOSFETs for space applications.  
These devices have improved immunity to Single  
Event Effect (SEE) and have been characterized for  
useful performance with Linear Energy Transfer (LET)  
up to 90MeV/(mg/cm2). Their combination of very low  
Features:  
n
n
n
n
n
n
n
n
n
n
Low RDS(on)  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
R
and faster switching times reduces power  
DS(on)  
loss and increases power density in today’s high  
speed switching applications such as DC-DC  
converters and motor controllers. These devices  
retain all of the well established advantages of  
MOSFETs such as voltage control, ease of paralleling  
and temperature stability of electrical parameters.  
Ceramic Package  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@V  
@V  
= 12V,T = 25°C  
Continuous Drain Current  
56*  
56*  
D
D
GS  
GS  
C
A
I
= 12V,T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
224  
DM  
@ T = 25°C  
P
D
250  
W
W/°C  
V
C
2.0  
V
±20  
GS  
E
462  
mJ  
A
AS  
I
56  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
25  
mJ  
V/ns  
AR  
dv/dt  
5.0  
T
-55 to 150  
J
°C  
g
T
Storage Temperature Range  
Pckg. Mounting Surface Temp.  
Weight  
STG  
300 (for 5s)  
3.3 (Typical)  
* Current is limited by package  
For footnotes refer to the last page  
www.irf.com  
1
12/21/11  
1234567...9

中文翻译

下载PDF

与IRHNA67160SCS相关器件

型号 品牌 获取价格 描述 数据表
IRHNA67160SCSD INFINEON

获取价格

 		Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si)
IRHNA67160SCV INFINEON

获取价格

 		Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si)
IRHNA67164 INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2)
IRHNA67164SCS INFINEON

获取价格

 		Rad hard, 150V, 49A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si)
IRHNA67164SCSD INFINEON

获取价格

 		Rad hard, 150V, 49A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si)
IRHNA67164SCV INFINEON

获取价格

 		Rad hard, 150V, 49A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si)
IRHNA67260 INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2)
IRHNA67260PBF INFINEON

获取价格

 		暂无描述
IRHNA67260SCS INFINEON

获取价格

 		Rad hard, 200V, 40A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si)
IRHNA67264 INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2)

与IRHNA67160SCS相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证