PD-96959C
IRHNA67164
2N7581U2
150V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
TECHNOLOGY
R
6
Product Summary
Part Number
IRHNA67164
IRHNA63164
Radiation Level RDS(on)
ID
100 kRads(Si)
300 kRads(Si)
56A*
56A*
0.018
0.018
SMD-2
Features
Description
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
IR HiRel R6 S-line technology provides high performance
power MOSFETs for space applications. These devices
have improved immunity to Single Event Effect (SEE) and
have been characterized for useful performance with Linear
Energy Transfer LET up to 90 (MeV/(mg/cm2).Their
combination of very low RDS(on) and faster switching times
reduces power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices retain all of
the well established advantages of MOSFETs such as
voltage control and temperature stability of electrical
parameters.
ESD Rating: Class 3A per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Pre-Irradiation
Symbol
Value
Parameter
Units
ID1 @ VGS = 12V, TC = 25°C Continuous Drain Current
ID2 @ VGS = 12V, TC = 100°C Continuous Drain Current
56*
A
49
224
250
2.0
±20
283
56
IDM @ TC = 25°C
PD @TC = 25°C
Pulsed Drain Current
Maximum Power Dissipation
W
W/°C
V
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
VGS
EAS
IAR
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
25
mJ
V/ns
7.5
-55 to + 150
TSTG
°C
g
300 (for 5s)
3.3 (Typical)
Weight
* Current is limited by package
For Footnotes, refer to the page 2.
1
2018-10-24
International Rectifier HiRel Products, Inc.