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IRHNA67164SCSD PDF预览

IRHNA67164SCSD

更新时间: 2023-12-06 20:13:24
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 465K
描述
Rad hard, 150V, 49A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QIRL, On DBC carrier

IRHNA67164SCSD 数据手册

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PD-96959C  
IRHNA67164  
2N7581U2  
150V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (SMD-2)  
TECHNOLOGY  
R
6
Product Summary  
Part Number  
IRHNA67164  
IRHNA63164  
Radiation Level RDS(on)  
ID  
100 kRads(Si)  
300 kRads(Si)  
56A*  
56A*  
0.018  
0.018  
Features  
Description  
Low RDS(on)  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Hermetically Sealed  
Surface Mount  
Ceramic Package  
Light Weight  
IR HiRel R6 S-line technology provides high performance  
power MOSFETs for space applications. These devices  
have improved immunity to Single Event Effect (SEE) and  
have been characterized for useful performance with Linear  
Energy Transfer LET up to 90 (MeV/(mg/cm2).Their  
combination of very low RDS(on) and faster switching times  
reduces power loss and increases power density in today’s  
high speed switching applications such as DC-DC  
converters and motor controllers. These devices retain all of  
the well established advantages of MOSFETs such as  
voltage control and temperature stability of electrical  
parameters.  
ESD Rating: Class 3A per MIL-STD-750,  
Method 1020  
Absolute Maximum Ratings  
Pre-Irradiation  
Symbol  
Value  
Parameter  
Units  
ID1 @ VGS = 12V, TC = 25°C Continuous Drain Current  
ID2 @ VGS = 12V, TC = 100°C Continuous Drain Current  
56*  
A
49  
224  
250  
2.0  
±20  
283  
56  
IDM @ TC = 25°C  
PD @TC = 25°C  
Pulsed Drain Current  
Maximum Power Dissipation  
W
W/°C  
V
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy   
Avalanche Current   
VGS  
EAS  
IAR  
mJ  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt   
Operating Junction and  
Storage Temperature Range  
Lead Temperature  
25  
mJ  
V/ns  
7.5  
-55 to + 150  
TSTG  
°C  
g
300 (for 5s)  
3.3 (Typical)  
Weight  
* Current is limited by package  
For Footnotes, refer to the page 2.  
1
2018-10-24  
International Rectifier HiRel Products, Inc.  

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