Datasheet > IRHLUBN7930Z4

IRHLUBN7930Z4

更新时间： 2024-09-16 21:20:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	225K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRHLUBN7930Z4 数据手册

PD-94764L

IRHLUB7970Z4

RADIATION HARDENED

LOGIC LEVEL POWER MOSFET

SURFACE MOUNT (UB)

JANSR2N7626UB

60V, P-CHANNEL

REF: MIL-PRF-19500/745

TECHNOLOGY

Product Summary

Part Number

Radiation Level RDS(on)

QPL Part Number

IRHLUB7970Z4 100K Rads (Si) 1.4Ω -0.53A JANSR2N7626UB

IRHLUB7930Z4 300K Rads (Si) 1.4Ω -0.53A JANSF2N7626UB

Refer to Page 11 for 3 Additional Part Numbers -

IRHLUBN7970Z4, IRHLUBC7970Z4, IRHLUBCN7970Z4

(SHIELDED METAL LID)

Features:

5V CMOS and TTL Compatible

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Light Weight

Complimentary P-Channel Available -

IRHLUB770Z4, IRHLUBN770Z4

IRHLUBC770Z4 & IRHLUBCN770Z4

International Rectifier’s R7^TMLogic Level Power MOSFETs

provide simple solution to interfacing CMOS and TTL control

circuits to power devices in space and other radiation

environments. The threshold voltage remains within acceptable

operating limits over the full operating temperature and post

radiation. This is achieved while maintaining single event

gate rupture and single event burnout immunity.

These devices are used in applications such as current boost

low signal source in PWM, voltage comparator and operational

amplifiers.

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= -4.5V, T = 25°C Continuous Drain Current

-0.53

= -4.5V, T = 100°C Continuous Drain Current

-0.33

-2.12

0.57

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

@ T = 25°C

W/°C

0.0045

±10

33.5

-0.53

0.06

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

V/ns

dv/dt

-4.4

-55 to 150

°C

Storage Temperature Range

Lead Temperature

STG

300 (for 5s)

43 (Typical)

Weight

For footnotes refer to the last page

www.irf.com

09/15/10

12 3 4 5 6 7...11

中文翻译

下载PDF

与IRHLUBN7930Z4相关器件

型号	品牌	获取价格	描述	数据表
IRHLUBN7970Z4	INFINEON	获取价格	Small Signal Field-Effect Transistor, 0.53A I(D), 60V, 1-Element, P-Channel, Silicon, Meta
IRHLUBN7970Z4S	INFINEON	获取价格	Small Signal Field-Effect Transistor,
IRHLUC730Z4	INFINEON	获取价格	RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT
IRHLUC730Z4SCS	INFINEON	获取价格	60V 100kRad Hi-Rel Dual N Channel TID hardened MOSFET in a LCC-6 package - Screening Level
IRHLUC7630Z4	INFINEON	获取价格	RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT
IRHLUC7670Z4	INFINEON	获取价格	Simple Drive Requirements
IRHLUC7670Z4_15	INFINEON	获取价格	Simple Drive Requirements
IRHLUC7670Z4SCS	INFINEON	获取价格	60V 100kRad Hi-Rel Dual 1N 1P Channel TID Hardened MOSFET in a LCC-6 package - Standard Pa
IRHLUC770Z4	INFINEON	获取价格	Simple Drive Requirements
IRHLUC770Z4_15	INFINEON	获取价格	Simple Drive Requirements