Datasheet > IRHLUC7970Z4SCS

IRHLUC7970Z4SCS

更新时间： 2024-11-06 11:01:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	204K
描述
60V 100kRad Hi-Rel Dual P Channel TID Hardened MOSFET in a LCC-6 package - Standard Packaging

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRHLUC7970Z4SCS 数据手册

PD-97574

2N7627UC

IRHLUC7970Z4

RADIATION HARDENED

LOGIC LEVEL POWER MOSFET

SURFACE MOUNT (LCC-6)

60V, DUAL P-CHANNEL

TECHNOLOGY

Product Summary

Part Number

Radiation Level RDS(on)

IRHLUC7970Z4 100K Rads (Si) 1.60Ω -0.65A

IRHLUC7930Z4 300K Rads (Si) 1.60Ω -0.65A

LCC-6

International Rectifier’s R7^TMLogic Level Power MOSFETs

provide simple solution to interfacing CMOS and TTL control

circuits to power devices in space and other radiation

environments.The threshold voltage remains within

acceptable operating limits over the full operating

temperature and post radiation.This is achieved while

maintaining single event gate rupture and single event

burnout immunity.

Features:

5V CMOS and TTL Compatible

Low RDS(on)

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

The device is ideal when used to interface directly with most

logic gates, linear IC’s, micro-controllers, and other device

types that operate from a 3.3-5V source. It may also be

used to increase the output current of a PWM, voltage

comparator or an operational amplifier where the logic level

drive signal is available.

Hermetically Sealed

Light Weight

Complimentary N-Channel Available -

IRHLUC770Z4

Absolute Maximum Ratings (Per Die)

Pre-Irradiation

Parameter

Units

@ V

= -4.5V, T = 25°C Continuous Drain Current

-0.65

= -4.5V,T = 100°C Continuous Drain Current

-0.41

-2.6

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

1.0

W/°C

0.01

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±10

-0.65

0.1

dv/dt

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

V/ns

-5.6

-55 to 150

°C

Storage Temperature Range

STG

Pckg. Mounting SurfaceTemp

Weight

300 (for 5s)

0.2 (Typical)

For footnotes refer to the last page

www.irf.com

10/11/10

12 3 4 5 6 7...9

中文翻译

下载PDF

与IRHLUC7970Z4SCS相关器件

型号	品牌	获取价格	描述	数据表
IRHLYS73034CM	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Met
IRHLYS77034CM	INFINEON	获取价格	RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA
IRHLYS77034CMS	INFINEON	获取价格	Power Field-Effect Transistor,
IRHLYS77034CMSCS	INFINEON	获取价格	Rad hard, 60V, 20A, single, N-channel MOSFET, R7 in a TO-257AA Low Ohmic package - TO-257A
IRHLYS77034CMSCSA	INFINEON	获取价格	Rad hard, 60V, 20A, single, N-channel MOSFET, R7 in a TO-257AA Low Ohmic package - TO-257A
IRHLYS793034CM	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 60V, 0.072ohm, 1-Element, P-Channel, Silicon, Met
IRHLYS793034CMS	INFINEON	获取价格	Power Field-Effect Transistor,
IRHLYS797034CM	INFINEON	获取价格	RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHLYS797034CMS	INFINEON	获取价格	Power Field-Effect Transistor,
IRHLYS797034CMSA	INFINEON	获取价格	Power Field-Effect Transistor,

与IRHLUC7970Z4SCS相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

9
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHLUC7970Z4SCS

IRHLUC7970Z4SCS 数据手册

与IRHLUC7970Z4SCS相关器件

与IRHLUC7970Z4SCS相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHLUC7970Z4SCS

IRHLUC7970Z4SCS 数据手册

与IRHLUC7970Z4SCS相关器件

与IRHLUC7970Z4SCS相关文章

您还可以找

您在本页遇到什么问题？