Datasheet > IRHLUC7670Z4_15

IRHLUC7670Z4_15

更新时间： 2024-09-17 01:16:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
16页	304K
描述
Simple Drive Requirements

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中文翻译

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IRHLUC7670Z4_15 数据手册

PD-97268A

2N7632UC

IRHLUC7670Z4

RADIATION HARDENED

60V, Combination 1N-1P-CHANNEL

LOGIC LEVEL POWER MOSFET

SURFACE MOUNT (LCC-6)

TECHNOLOGY

Product Summary

Part Number

Radiation Level

CHANNEL

DS(on)

0.89A

-0.65A

0.89A

-0.65A

0.75Ω

1.60Ω

0.75Ω

1.60Ω

IRHLUC7670Z4

100K Rads (Si)

IRHLUC7630Z4

300K Rads (Si)

LCC-6

International Rectifier’s R7^TMLogic Level Power MOSFETs

provide simple solution to interfacing CMOS and TTL control

circuits to power devices in space and other radiation

environments.The threshold voltage remains within

acceptable operating limits over the full operating

temperature and post radiation.This is achieved while

maintaining single event gate rupture and single event

burnout immunity.

Features:

5V CMOS and TTL Compatible

Low RDS(on)

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Light Weight

The device is ideal when used to interface directly with most

logic gates, linear IC’s, micro-controllers, and other device

types that operate from a 3.3-5V source. It may also be

used to increase the output current of a PWM, voltage

comparator or an operational amplifier where the logic level

drive signal is available.

Pre-Irradiation

Absolute Maximum Ratings (Per Die)

Parameter

N-Channel

0.89

P-Channel

-0.65

-0.41

-2.6

Units

I @ V

= ±4.5V, T = 25°C Continuous Drain Current

I @ V

= ±4.5V, T =100°C Continuous Drain Current

0.56

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current À

3.56

@ T = 25°C

1.0

W/°C

0.01

±10

20 Á

0.89

34 ²

-0.65

0.1

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt

Operating Junction

0.1

V/ns

dv/dt

4.7 Â

-5.6 ³

-55 to 150

Storage Temperature Range

Pckg. Mounting Surface Temp.

Weight

°C

STG

300 (for 5s)

0.2 (Typical)

For footnotes refer to the last page

www.irf.com

10/18/10

12 3 4 5 6 7...16

中文翻译

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与IRHLUC7670Z4_15相关器件

型号	品牌	获取价格	描述	数据表
IRHLUC7670Z4SCS	INFINEON	获取价格	60V 100kRad Hi-Rel Dual 1N 1P Channel TID Hardened MOSFET in a LCC-6 package - Standard Pa
IRHLUC770Z4	INFINEON	获取价格	Simple Drive Requirements
IRHLUC770Z4_15	INFINEON	获取价格	Simple Drive Requirements
IRHLUC770Z4SCS	INFINEON	获取价格	60V 100kRad Hi-Rel Dual N Channel TID hardened MOSFET in a LCC-6 package - Standard Packag
IRHLUC7930Z4	INFINEON	获取价格	Small Signal Field-Effect Transistor, 0.65A I(D), 60V, 2-Element, P-Channel, Silicon, Meta
IRHLUC7970Z4	INFINEON	获取价格	Simple Drive Requirements
IRHLUC7970Z4_15	INFINEON	获取价格	Simple Drive Requirements
IRHLUC7970Z4SCS	INFINEON	获取价格	60V 100kRad Hi-Rel Dual P Channel TID Hardened MOSFET in a LCC-6 package - Standard Packag
IRHLYS73034CM	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Met
IRHLYS77034CM	INFINEON	获取价格	RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA

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