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IRHM2C50SEUPBF PDF预览

IRHM2C50SEUPBF

更新时间： 2024-11-20 19:40:03
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
8页 98K
描述
Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IRHM2C50SEUPBF 数据手册

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PD - 91252A  
REPETITIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTOR  
IRHM2C50SE  
IRHM7C50SE  
N-CHANNEL  
SINGLE EVENT EFFECT (SEE) RAD HARD  
Product Summary  
600Volt, 0.6Ω, (SEE) RAD HARD HEXFET  
Part Number  
IRHM2C50SE  
IRHM7C50SE  
BVDSS  
600V  
600V  
RDS(on)  
0.60Ω  
0.60Ω  
ID  
International Rectifier’s (SEE) RAD HARD technology  
HEXFETs demonstrate immunity to SEE failure. Ad-  
ditionally, under identical pre- and post-irrradiation  
test conditions, International Rectifier’s RAD HARD  
HEXFETs retain identical electrical specifications up  
to 1 x 105 Rads (Si) total dose. No compensation in  
gate drive circuitry is required.These devices are also  
capable of surviving transient ionization pulses as high  
as 1 x 1012 Rads (Si)/Sec, and return to normal op-  
eration within a few microseconds.Since the SEE pro-  
cess utilizes International Rectifier’s patented HEXFET  
technology, the user can expect the highest quality  
and reliability in the industry.  
10.4A  
10.4A  
Features:  
n
n
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 106 Rads (Si)  
Single Event Burnout (SEB) Hardened  
Single Event Gate Rupture (SEGR) Hardened  
Gamma Dot (Flash X-Ray) Hardened  
Neutron Tolerant  
Identical Pre- and Post-Electrical Test Conditions  
Repetitive Avalanche Rating  
Dynamic dv/dt Rating  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
RAD HARD HEXFET transistors also feature all of  
the well-established advantages of MOSFETs, such  
as voltage control, very fast switching, ease of paral-  
leling and temperature stability of the electrical pa-  
rameters. They are well-suited for applications such  
as switching power supplies, motor controls, invert-  
ers, choppers, audio amplifiers and high-energy pulse  
circuits in space and weapons environments.  
Electrically Isolated  
Ceramic Eyelets  
Pre-Irradiation  
Absolute Maximum Ratings  
Parameter  
IRHM2C50SE, IRHM7C50SE Units  
I
D
@ V  
= 12V, T = 25°C Continuous Drain Current  
10.4  
GS  
C
A
I
D
@ V  
= 12V, T = 100°C Continuous Drain Current  
6.5  
41.6  
151  
GS  
C
I
Pulsed Drain Current   
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
DM  
@ T = 25°C  
P
W
W/°C  
V
D
C
1.2  
V
GS  
±20  
E
Single Pulse Avalanche Energy ‚  
Avalanche Current   
500  
mJ  
A
AS  
I
10.4  
15.1  
4.0  
AR  
E
AR  
dv/dt  
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt ƒ  
Operating Junction  
mJ  
V/ns  
T
-55 to 150  
J
T
Storage Temperature Range  
Lead Temperature  
oC  
STG  
300 (0.063 in. (1.6mm) from  
case for 10 sec.)  
Weight  
9.3 (typical)  
g
www.irf.com  
1
1/6/99  
12345678

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