Datasheet > IRHM3Z60

IRHM3Z60

更新时间： 2024-11-19 22:15:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	124K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)

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IRHM3Z60 数据手册

PD - 91701B

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-254AA)

IRHM7Z60

30V, N-CHANNEL

RAD-Hard^™HEXFET^®TECHNOLOGY

Product Summary

Part Number Radiation Level

RDS(on)

IRHM7Z60

IRHM3Z60

IRHM4Z60

IRHM8Z60

100K Rads (Si)

300K Rads (Si)

600K Rads (Si)

0.014Ω 35*A

1000K Rads (Si) 0.014Ω 35*A

TO-254AA

Features:

International Rectifier’s RAD-Hard HEXFET^®technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for bothTotal Dose and Single Event Effects (SEE).

The combination of low Rds(on) and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

35*

= 12V, T = 100°C Continuous Drain Current

35*

140

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

250

W/°C

Linear Derating Factor

2.0

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

500

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

dv/dt

0.35

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 ( 0.063 in. (1.6mm) from case for 10s)

9.3 (Typical )

For footnotes refer to the last page

*Current is limited by internal wire diameter

www.irf.com

12/20/01

12 3 4 5 6 7 8

中文翻译

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与IRHM3Z60相关器件

型号	品牌	获取价格	描述	数据表
IRHM4054	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
IRHM4054D	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta
IRHM4054DPBF	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta
IRHM4054PBF	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta
IRHM4054U	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta
IRHM4054UPBF	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta
IRHM4064D	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Met
IRHM4064DPBF	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Met
IRHM4064U	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Met
IRHM4064UPBF	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Met

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