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IRHM4150UPBF

更新时间： 2024-11-05 20:03:15
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页数 文件大小 规格书
12页 444K
描述
Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN

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IRHM4150UPBF 数据手册

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PD - 90675C  
IRHM7150  
JANSR2N7268  
100V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
®
THRU-HOLE (TO-254AA)  
HEXFET TECHNOLOGY  
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
QPL Part Number  
IRHM7150  
IRHM3150  
IRHM4150  
IRHM8150  
100K Rads (Si)  
300K Rads (Si)  
600K Rads (Si)  
0.065Ω  
0.065Ω  
0.065Ω  
34A JANSR2N7268  
34A JANSF2N7268  
34A JANSG2N7268  
34A JANSH2N7268  
1000K Rads (Si) 0.065Ω  
TO-254AA  
International Rectifier’s RADHard HEXFET® technol-  
ogy provides high performance power MOSFETs for  
space applications. This technology has over a de-  
cade of proven performance and reliability in satellite  
applications. These devices have been character-  
ized for both Total Dose and Single Event Effects (SEE).  
The combination of low Rdson and low gate charge  
reduces the power losses in switching applications  
such as DC to DC converters and motor control. These  
devices retain all of the well established advantages  
of MOSFETs such as voltage control, fast switching,  
ease of paralleling and temperature stability of elec-  
trical parameters.  
Features:  
!
!
!
!
!
!
!
!
!
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Eyelets  
Light Weight  
Absolute Maximum Ratings  
Parameter  
Pre-Irradiation  
Units  
I
@ V  
@ V  
= 12V, T = 25°C Continuous Drain Current  
C
34  
D
GS  
A
I
= 12V, T = 100°C Continuous Drain Current  
C
21  
136  
D
GS  
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
Linear Derating Factor  
DM  
P
@ T = 25°C  
C
150  
W
W/°C  
V
D
1.2  
V
Gate-to-Source Voltage  
±20  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
500  
mJ  
A
AS  
I
34  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
15  
mJ  
V/ns  
AR  
dv/dt  
5.5  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
STG  
Lead Temperature  
Weight  
300 (0.063 in. (1.6mm) from case for 10s)  
9.3 (Typical)  
g
For footnotes refer to the last page  
www.irf.com  
1
8/14/01  
1234567...12

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