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IRHM4054DPBF PDF预览

IRHM4054DPBF

更新时间： 2024-11-24 13:08:51
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
8页 167K
描述
Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN

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IRHM4054DPBF 数据手册

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PD - 90887E  
IRHM7054  
JANSR2N7394  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (TO-254AA)  
60V, N-CHANNEL  
REF: MIL-PRF-19500/603  
RAD Hard™ HEXFET® TECHNOLOGY  
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
QPL Part Number  
IRHM7054  
IRHM3054  
100K Rads (Si)  
300K Rads (Si)  
0.027Ω 35*A JANSR2N7394  
0.027Ω 35*A JANSF2N7394  
IRHM4054  
IRHM8054  
600K Rads (Si)  
1000K Rads (Si)  
0.027Ω 35*A JANSG2N7394  
0.027Ω 35*A JANSH2N7394  
TO-254AA  
International Rectifier’s RADHard HEXFET®technology  
provides high performance power MOSFETs for  
space applications. This technology has over a  
decade of proven performance and reliability in  
satellite applications. These devices have been  
characterized for both Total Dose and Single Event  
Effects (SEE). The combination of low Rdson and  
low gate charge reduces the power losses in  
switching applications such as DC to DC converters  
and motor control. These devices retain all of the well  
established advantages of MOSFETs such as voltage  
control, fast switching, ease of paralleling and  
temperature stability of electrical parameters.  
Features:  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Package  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C Continuous Drain Current  
35*  
D
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
30  
140  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
DM  
@ T = 25°C  
P
150  
W
W/°C  
V
D
C
1.2  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
GS  
E
500  
mJ  
A
AS  
I
35  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
15  
mJ  
V/ns  
AR  
dv/dt  
3.5  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
300 (0.063 in.(1.6mm) from case for 10s)  
9.3 (Typical )  
Lead Temperature  
Weight  
For footnotes refer to the last page  
*Current is limited by package  
www.irf.com  
1
08/30/04  
12345678

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