Datasheet > IRHM4064DPBF

IRHM4064DPBF

更新时间： 2024-11-05 19:46:11

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
8页	268K
描述
Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRHM4064DPBF 数据手册

T^®

Absolute Maximum Ratings

Parameter

PD - 91564D

IRHM7064

JANSR2N7431

60V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (T0-254AA)

REF:MIL-PRF-19500/663

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

IRHM7064

IRHM3064

IRHM4064

IRHM8064

100K Rads (Si)

300K Rads (Si)

600K Rads (Si)

1000K Rads (Si)

0.021Ω 35*A JANSR2N7431

0.021Ω 35*A JANSF2N7431

0.021Ω 35*A JANSG2N7431

0.021Ω 35*A JANSH2N7431

TO-254AA

International Rectifiers RADHard HEXFET^®technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for both Total Dose and Single Event Effects (SEE).

The combination of low Rdson and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Light Weight

Pre-Irradiation

Units

@ V

= 12V, T = 25°C Continuous Drain Current

35*

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

284

@ T = 25°C

250

W/°C

Linear Derating Factor

2.0

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

500

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

dv/dt

2.5

-55 to 150

Storage Temperature Range

^oC

STG

300 ( 0.063 in.(1.6mm) from case for 10s)

9.3 (Typical )

Lead Temperature

Weight

For footnotes refer to the last page

*Current is limited by pin diameter

www.irf.com

8/9/01

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRHM4064DPBF相关器件

型号	品牌	获取价格	描述	数据表
IRHM4064U	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Met
IRHM4064UPBF	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Met
IRHM4130	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM4130DPBF	INFINEON	获取价格	Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
IRHM4130PBF	INFINEON	获取价格	Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
IRHM4130U	INFINEON	获取价格	Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
IRHM4150	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM4150D	INFINEON	获取价格	Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Me
IRHM4150DPBF	INFINEON	获取价格	Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Me
IRHM4150PBF	INFINEON	获取价格	Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Me

与IRHM4064DPBF相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

14
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

10
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

36
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHM4064DPBF

IRHM4064DPBF 数据手册

与IRHM4064DPBF相关器件

与IRHM4064DPBF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHM4064DPBF

IRHM4064DPBF 数据手册

与IRHM4064DPBF相关器件

与IRHM4064DPBF相关文章

您还可以找

您在本页遇到什么问题？