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IRHM4064UPBF

更新时间： 2024-11-24 19:46:11
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页数 文件大小 规格书
8页 268K
描述
Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN

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IRHM4064UPBF 数据手册

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PD - 91564D  
IRHM7064  
JANSR2N7431  
60V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (T0-254AA)  
REF:MIL-PRF-19500/663  
™
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
QPL Part Number  
IRHM7064  
IRHM3064  
IRHM4064  
IRHM8064  
100K Rads (Si)  
300K Rads (Si)  
600K Rads (Si)  
1000K Rads (Si)  
0.021Ω 35*A JANSR2N7431  
0.021Ω 35*A JANSF2N7431  
0.021Ω 35*A JANSG2N7431  
0.021Ω 35*A JANSH2N7431  
TO-254AA  
International Rectifier’s RADHard HEXFET® technol-  
ogy provides high performance power MOSFETs for  
space applications. This technology has over a de-  
cade of proven performance and reliability in satellite  
applications. These devices have been character-  
ized for both Total Dose and Single Event Effects (SEE).  
The combination of low Rdson and low gate charge  
reduces the power losses in switching applications  
such as DC to DC converters and motor control. These  
devices retain all of the well established advantages  
of MOSFETs such as voltage control, fast switching,  
ease of paralleling and temperature stability of elec-  
trical parameters.  
Features:  
!
!
!
!
!
!
!
!
!
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Package  
Light Weight  
Pre-Irradiation  
Units  
I
@ V  
@ V  
= 12V, T = 25°C Continuous Drain Current  
C
35*  
35  
D
GS  
A
I
= 12V, T = 100°C Continuous Drain Current  
C
D
GS  
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
284  
DM  
P
D
@ T = 25°C  
C
250  
W
W/°C  
V
Linear Derating Factor  
2.0  
V
Gate-to-Source Voltage  
±20  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
500  
mJ  
A
AS  
I
35  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
25  
mJ  
V/ns  
AR  
dv/dt  
2.5  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
STG  
300 ( 0.063 in.(1.6mm) from case for 10s)  
9.3 (Typical )  
Lead Temperature  
Weight  
g
For footnotes refer to the last page  
*Current is limited by pin diameter  
www.irf.com  
1
8/9/01  
12345678

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