Datasheet > IRHM3064DPBF

IRHM3064DPBF

更新时间： 2024-11-05 19:46:11

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
8页	268K
描述
Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN

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IRHM3064DPBF 数据手册

T^®

Absolute Maximum Ratings

Parameter

PD - 91564D

IRHM7064

JANSR2N7431

60V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (T0-254AA)

REF:MIL-PRF-19500/663

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

IRHM7064

IRHM3064

IRHM4064

IRHM8064

100K Rads (Si)

300K Rads (Si)

600K Rads (Si)

1000K Rads (Si)

0.021Ω 35*A JANSR2N7431

0.021Ω 35*A JANSF2N7431

0.021Ω 35*A JANSG2N7431

0.021Ω 35*A JANSH2N7431

TO-254AA

International Rectifiers RADHard HEXFET^®technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for both Total Dose and Single Event Effects (SEE).

The combination of low Rdson and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Light Weight

Pre-Irradiation

Units

@ V

= 12V, T = 25°C Continuous Drain Current

35*

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

284

@ T = 25°C

250

W/°C

Linear Derating Factor

2.0

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

500

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

dv/dt

2.5

-55 to 150

Storage Temperature Range

^oC

STG

300 ( 0.063 in.(1.6mm) from case for 10s)

9.3 (Typical )

Lead Temperature

Weight

For footnotes refer to the last page

*Current is limited by pin diameter

www.irf.com

8/9/01

12 3 4 5 6 7 8

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与IRHM3064DPBF相关器件

型号	品牌	获取价格	描述	数据表
IRHM3064PBF	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Met
IRHM3064U	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Met
IRHM3064UPBF	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Met
IRHM3130	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM3150	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM3150U	INFINEON	获取价格	Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Me
IRHM3150UPBF	INFINEON	获取价格	Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Me
IRHM3160	INFINEON	获取价格	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
IRHM3160D	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Me
IRHM3160PBF	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Me

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