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IRHM3160U

更新时间： 2024-11-05 19:32:55
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8页 266K
描述
Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN

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IRHM3160U 数据手册

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PD - 91331C  
IRHM7160  
JANSR2N7432  
100V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (T0-254AA)  
®
™
RAD Hard HEXFET TECHNOLOGY  
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
QPL Part Number  
IRHM7160  
IRHM3160  
IRHM4160  
IRHM8160  
100K Rads (Si) 0.045Ω 35*A JANSR2N7432  
300K Rads (Si) 0.045Ω 35*A JANSF2N7432  
600K Rads (Si) 0.045Ω 35*A JANSG2N7432  
1000K Rads (Si) 0.045Ω 35*A JANSH2N7432  
TO-254AA  
International Rectifier’s RADHard HEXFET® technol-  
ogy provides high performance power MOSFETs for  
space applications. This technology has over a de-  
cade of proven performance and reliability in satellite  
applications. These devices have been character-  
ized for both Total Dose and Single Event Effects (SEE).  
The combination of low Rdson and low gate charge  
reduces the power losses in switching applications  
such as DC to DC converters and motor control. These  
devices retain all of the well established advantages  
of MOSFETs such as voltage control, fast switching,  
ease of paralleling and temperature stability of elec-  
trical parameters.  
Features:  
!
!
!
!
!
!
!
!
!
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Package  
Light Weight  
Pre-Irradiation  
Units  
I
@ V  
@ V  
= 12V, T = 25°C Continuous Drain Current  
C
35*  
D
GS  
A
I
= 12V, T = 100°C Continuous Drain Current  
C
35*  
201  
D
GS  
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
DM  
P
@ T = 25°C  
C
250  
W
W/°C  
V
D
Linear Derating Factor  
2.0  
V
Gate-to-Source Voltage  
±20  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
500  
mJ  
A
AS  
I
35  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
25  
mJ  
V/ns  
AR  
dv/dt  
7.3  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
STG  
300 ( 0.063 in.(1.6mm) from case for 10s)  
9.3 (Typical )  
Lead Temperature  
Weight  
g
*Current limited by pin diameter  
For footnotes refer to the last page  
www.irf.com  
1
8/14/01  
12345678

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