IRHM3054U

更新时间： 2024-11-20 13:08:51

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
8页	167K
描述
Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN

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IRHM3054U 数据手册

PD - 90887E

IRHM7054

JANSR2N7394

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-254AA)

60V, N-CHANNEL

REF: MIL-PRF-19500/603

RAD Hard^™HEXFET^®TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

IRHM7054

IRHM3054

100K Rads (Si)

300K Rads (Si)

0.027Ω 35*A JANSR2N7394

0.027Ω 35*A JANSF2N7394

IRHM4054

IRHM8054

600K Rads (Si)

1000K Rads (Si)

0.027Ω 35*A JANSG2N7394

0.027Ω 35*A JANSH2N7394

TO-254AA

International Rectifier’s RADHard HEXFET^®technology

provides high performance power MOSFETs for

space applications. This technology has over a

decade of proven performance and reliability in

satellite applications. These devices have been

characterized for both Total Dose and Single Event

Effects (SEE). The combination of low Rdson and

low gate charge reduces the power losses in

switching applications such as DC to DC converters

and motor control. These devices retain all of the well

established advantages of MOSFETs such as voltage

control, fast switching, ease of paralleling and

temperature stability of electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C Continuous Drain Current

35*

= 12V, T = 100°C Continuous Drain Current

140

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

150

W/°C

1.2

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

500

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

V/ns

dv/dt

3.5

-55 to 150

Storage Temperature Range

^oC

STG

300 (0.063 in.(1.6mm) from case for 10s)

9.3 (Typical )

Lead Temperature

Weight

For footnotes refer to the last page

*Current is limited by package

www.irf.com

08/30/04

12 3 4 5 6 7 8

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与IRHM3054U相关器件

型号	品牌	获取价格	描述	数据表
IRHM3054UPBF	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta
IRHM3064D	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Met
IRHM3064DPBF	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Met
IRHM3064PBF	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Met
IRHM3064U	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Met
IRHM3064UPBF	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Met
IRHM3130	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM3150	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM3150U	INFINEON	获取价格	Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Me
IRHM3150UPBF	INFINEON	获取价格	Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Me

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