IRHM2C50SE

更新时间： 2024-11-04 22:24:03

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管局域网
页数	文件大小	规格书
4页	111K
描述
TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A)

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Provisional Data Sheet No. PD-9.1252B

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET^®TRANSISTOR

IRHM2C50SE

IRHM7C50SE

N-CHANNEL

SINGLE EVENT EFFECT (SEE) RAD HARD

600Volt, 0.60Ω, (SEE) RAD HARD HEXFET

Product Summary

International Rectifier’s (SEE) RAD HARD technology

HEXFETs demonstrate virtual immunity to SEE fail-

ure.Additionally, under identical pre- and post-radia-

tion test conditions, International Rectifier’s RAD HARD

HEXFETs retain identical electrical specifications up

to 1 x 10⁵Rads (Si) total dose. No compensation in

gate drive circuitry is required.These devices are also

capable of surviving transient ionization pulses as high

as 1 x 10¹²Rads (Si)/Sec, and return to normal opera-

tion within a few microseconds. Since the SEE pro-

cess utilizes International Rectifier’s patented HEXFET

technology, the user can expect the highest quality and

reliability in the industry.

Part Number

IRHM2C50SE

IRHM7C50SE

BVDSS

RDS(on)

600V

0.60Ω

10.4A

Features:

Radiation Hardened up to 1 x 10⁵Rads (Si)

Single Event Burnout (SEB) Hardened

Single Event Gate Rupture (SEGR) Hardened

Gamma Dot (Flash X-Ray) Hardened

Neutron Tolerant

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Rating

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

RAD HARD HEXFET transistors also feature all of

the well-established advantages of MOSFETs, such

as voltage control, very fast switching, ease of paral-

leling and temperature stability of the electrical pa-

rameters. They are well-suited for applications such

as switching power supplies, motor controls, invert-

ers, choppers, audio amplifiers and high-energy pulse

circuits in space and weapons environments.

Ceramic Eyelets

Pre-Radiation

Absolute Maximum Ratings

Parameter

IRHM2C50SE, IRHM7C50SE Units

@ V

= 12V, T = 25°C Continuous Drain Current

10.4

@ V

= 12V, T = 100°C Continuous Drain Current

6.5

41.6

150

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

@ T = 25°C

W/K ꢀ

1.2

±20

Single Pulse Avalanche Energy

Avalanche Current

500

10.4

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

3.0

V/ns

-55 to 150

Storage Temperature Range

Lead Temperature

^oC

STG

300 (0.063 in (1.6 mm) from case for 10 sec)

9.3 (typical)

Weight

To Order

12 3 4

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与IRHM2C50SE相关器件

型号	品牌	获取价格	描述	数据表
IRHM2C50SED	INFINEON	获取价格	Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, M
IRHM2C50SEDPBF	INFINEON	获取价格	Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, M
IRHM2C50SEPBF	INFINEON	获取价格	Power Field-Effect Transistor, 10A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Meta
IRHM2C50SEU	INFINEON	获取价格	Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, M
IRHM2C50SEUPBF	INFINEON	获取价格	Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, M
IRHM3054	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
IRHM3054D	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta
IRHM3054DPBF	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta
IRHM3054PBF	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta
IRHM3054U	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta

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