Datasheet > IRHLYS77034CMSCSA

IRHLYS77034CMSCSA

更新时间： 2024-11-21 14:56:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	2677K
描述
Rad hard, 60V, 20A, single, N-channel MOSFET, R7 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 100 krad(Si) TID, QIRL, Lead attached

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PD-97291B

IRHLYS77034CM

2N7607T3

60V, N-CHANNEL

RADIATION HARDENED

LOGIC LEVEL POWER MOSFET

THRU-HOLE (Low-Ohmic TO-257AA)

TECHNOLOGY

Product Summary

Part Number

Radiation Level RDS(on)

I_D

IRHLYS77034CM

IRHLYS73034CM

100 kRads(Si)

300 kRads(Si)

20A*

0.045

Low-Ohmic

Description

Features

 5V CMOS and TTL Compatible

 Fast Switching

 Single Event Effect (SEE) Hardened

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Light Weight

IR HiRel R7 Logic Level Power MOSFETs provide

simple solution to interfacing CMOS and TTL

control circuits to power devices in space and

other radiation environments. The threshold

voltage remains within acceptable operating limits

over the full operating temperature and post

radiation. This is achieved while maintaining single

event gate rupture and single event burnout

immunity.

 Complimentary P-Channel Available -

IRHLYS797034CM

These devices are used in applications such as

current boost low signal source in PWM, voltage

comparator and operational amplifiers.

 ESD Rating: Class 1B per MIL-STD-750, Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Units

I_D1@ V_GS= 4.5V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 4.5V, T_C= 100°C Continuous Drain Current

20*

I_DM@ T_C= 25°C

P_D@ T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

0.6

± 10

V_GS

E_AS

I_AR

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

7.5

6.9

-55 to + 150

T_STG

°C

300 (0.063 in. /1.6 mm from case for 10s)

4.3 (Typical)

Weight

*Current is limited by package

For footnotes refer to the page 2.

2018-12-19

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7...9

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与IRHLYS77034CMSCSA相关器件

型号	品牌	获取价格	描述	数据表
IRHLYS793034CM	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 60V, 0.072ohm, 1-Element, P-Channel, Silicon, Met
IRHLYS793034CMS	INFINEON	获取价格	Power Field-Effect Transistor,
IRHLYS797034CM	INFINEON	获取价格	RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHLYS797034CMS	INFINEON	获取价格	Power Field-Effect Transistor,
IRHLYS797034CMSA	INFINEON	获取价格	Power Field-Effect Transistor,
IRHLYS797034CMSCS	INFINEON	获取价格	Power Field-Effect Transistor,
IRHM150	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 25A I(D) \| TO-254AA
IRHM250	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 25A I(D) \| TO-254AA
IRHM2C50SE	INFINEON	获取价格	TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A)
IRHM2C50SED	INFINEON	获取价格	Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, M

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