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IRHLYS77034CMS PDF预览

IRHLYS77034CMS

更新时间: 2024-11-05 19:14:43
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
9页 2677K
描述
Power Field-Effect Transistor,

IRHLYS77034CMS 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-XSFM-P3
Reach Compliance Code:compliant风险等级:5.72
其他特性:HIGH RELIABILITY雪崩能效等级(Eas):98 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):20 A最大漏极电流 (ID):20 A
最大漏源导通电阻:0.045 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-257AAJESD-30 代码:R-XSFM-P3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):75 W
最大脉冲漏极电流 (IDM):80 A参考标准:RH - 100K Rad(Si)
表面贴装:NO端子形式:PIN/PEG
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):88 ns
最大开启时间(吨):136 nsBase Number Matches:1

IRHLYS77034CMS 数据手册

 浏览型号IRHLYS77034CMS的Datasheet PDF文件第2页浏览型号IRHLYS77034CMS的Datasheet PDF文件第3页浏览型号IRHLYS77034CMS的Datasheet PDF文件第4页浏览型号IRHLYS77034CMS的Datasheet PDF文件第5页浏览型号IRHLYS77034CMS的Datasheet PDF文件第6页浏览型号IRHLYS77034CMS的Datasheet PDF文件第7页 
PD-97291B  
IRHLYS77034CM  
2N7607T3  
60V, N-CHANNEL  
RADIATION HARDENED  
LOGIC LEVEL POWER MOSFET  
THRU-HOLE (Low-Ohmic TO-257AA)  
TECHNOLOGY  
R
7
Product Summary  
Part Number  
Radiation Level RDS(on)  
ID  
IRHLYS77034CM  
IRHLYS73034CM  
100 kRads(Si)  
300 kRads(Si)  
20A*  
20A*  
0.045  
0.045  
Low-Ohmic  
Description  
Features  
5V CMOS and TTL Compatible  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Hermetically Sealed  
Light Weight  
IR HiRel R7 Logic Level Power MOSFETs provide  
simple solution to interfacing CMOS and TTL  
control circuits to power devices in space and  
other radiation environments. The threshold  
voltage remains within acceptable operating limits  
over the full operating temperature and post  
radiation. This is achieved while maintaining single  
event gate rupture and single event burnout  
immunity.  
Complimentary P-Channel Available -  
IRHLYS797034CM  
These devices are used in applications such as  
current boost low signal source in PWM, voltage  
comparator and operational amplifiers.  
ESD Rating: Class 1B per MIL-STD-750, Method 1020  
Absolute Maximum Ratings  
Pre-Irradiation  
Symbol  
Value  
Parameter  
Units  
ID1 @ VGS = 4.5V, TC = 25°C Continuous Drain Current  
ID2 @ VGS = 4.5V, TC = 100°C Continuous Drain Current  
20*  
20*  
80  
A
IDM @ TC = 25°C  
PD @ TC = 25°C  
Pulsed Drain Current  
W
W/°C  
V
Maximum Power Dissipation  
75  
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy   
Avalanche Current   
0.6  
± 10  
98  
VGS  
EAS  
IAR  
mJ  
A
20  
mJ  
V/ns  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt   
Operating Junction and  
Storage Temperature Range  
Lead Temperature  
7.5  
6.9  
-55 to + 150  
TSTG  
°C  
g
300 (0.063 in. /1.6 mm from case for 10s)  
4.3 (Typical)  
Weight  
*Current is limited by package  
For footnotes refer to the page 2.  
1
2018-12-19  
International Rectifier HiRel Products, Inc.  

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