Datasheet > IRHLYS797034CMS

IRHLYS797034CMS

更新时间： 2024-11-20 20:48:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	405K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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IRHLYS797034CMS 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	Base Number Matches：	1

IRHLYS797034CMS 数据手册

PD-97292C

2N7625T3

IRHLYS797034CM

60V, P-CHANNEL

RADIATION HARDENED

LOGIC LEVEL POWER MOSFET

THRU-HOLE (Low –Ohmic TO-257AA)

TECHNOLOGY

Product Summary

Part Number

Radiation Level RDS(on)

I_D

IRHLYS797034CM 100k Rads(Si)

IRHLYS793034CM 300k Rads(Si)

-20A*

0.074

Low-Ohmic

TO-257AA

-20A*

Description

Features

IR HiRel R7 Logic Level Power MOSFETs provide simple

solution to interfacing CMOS and TTL control circuits to

power devices in space and other radiation environments.

The threshold voltage remains within acceptable operating

limits over the full operating temperature and post radiation.

This is achieved while maintaining single event gate rupture

and single event burnout immunity.

The device is ideal when used to interface directly with

most logic gates, linear IC’s, micro-controllers, and other

device types that operate from a 3.3-5V source. It may also

be used to increase the output current of a PWM, voltage

comparator or an operational amplifier where the logic level

drive signal is available.

 5V CMOS and TTL Compatible

 Fast Switching

 Single Event Effect (SEE) Hardened

 Low Total Gate Charge

 Simple Drive Requirements

 Ease of Paralleling

 Hermetically Sealed

 Light Weight

 Complimentary N-Channel Available - IRHLYS77034CM

 ESD Rating: Class 1C per MIL-STD-750, Method 1020

Absolute Maximum Ratings

Parameter

Pre-Irradiation

Units

I_D@ V_GS= -4.5V, T_C= 25°C Continuous Drain Current

I_D@ V_GS= -4.5V, T_C= 100°C Continuous Drain Current

-20*

-16.6

-80

I_DM

Pulsed Drain Current 

P_D@T_C= 25°C

Maximum Power Dissipation

W/°C

Linear Derating Factor

0.6

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

± 10

181

-20

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Pckg. Mounting Surface Temp.

Weight

7.5

V/ns

-10.9

-55 to + 150

T_STG

°C

300 (0.063 in. / 1.6mm from case for 10s)

4.3 (Typical)

* Current is limited by package

For Footnotes, refer to the page 2.

2016-11-14

12 3 4 5 6 7...9

中文翻译

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与IRHLYS797034CMS相关器件

型号	品牌	获取价格	描述	数据表
IRHLYS797034CMSA	INFINEON	获取价格	Power Field-Effect Transistor,
IRHLYS797034CMSCS	INFINEON	获取价格	Power Field-Effect Transistor,
IRHM150	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 25A I(D) \| TO-254AA
IRHM250	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 25A I(D) \| TO-254AA
IRHM2C50SE	INFINEON	获取价格	TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A)
IRHM2C50SED	INFINEON	获取价格	Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, M
IRHM2C50SEDPBF	INFINEON	获取价格	Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, M
IRHM2C50SEPBF	INFINEON	获取价格	Power Field-Effect Transistor, 10A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Meta
IRHM2C50SEU	INFINEON	获取价格	Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, M
IRHM2C50SEUPBF	INFINEON	获取价格	Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, M

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