Datasheet > IRHLYS797034CMSCS

IRHLYS797034CMSCS

更新时间： 2024-11-06 05:25:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	974K
描述
Power Field-Effect Transistor,

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PD-97292E

IRHLYS797034CM

JANSR2N7625T3

60V, P-CHANNEL

RADIATION HARDENED

LOGIC LEVEL POWER MOSFET

THRU-HOLE (Low –Ohmic TO-257AA)

REF: MIL-PRF-19500/757

TECHNOLOGY

Product Summary

Part Number

Radiation Level RDS(on)

I_D

QPL Part Number

JANSR2N7625T3

JANSF2N7625T3

IRHLYS797034CM 100k Rads(Si)

IRHLYS793034CM 300k Rads(Si)

-20A*

0.074

Low-Ohmic

TO-257AA

Description

Features

IR HiRel R7 Logic Level Power MOSFETs provide simple

solution to interfacing CMOS and TTL control circuits to

power devices in space and other radiation environments.

The threshold voltage remains within acceptable operating

limits over the full operating temperature and post radiation.

This is achieved while maintaining single event gate rupture

and single event burnout immunity.

The device is ideal when used to interface directly with

most logic gates, linear IC’s, micro-controllers, and other

device types that operate from a 3.3-5V source. It may also

be used to increase the output current of a PWM, voltage

comparator or an operational amplifier where the logic level

drive signal is available.

 5V CMOS and TTL Compatible

 Fast Switching

 Single Event Effect (SEE) Hardened

 Low Total Gate Charge

 Simple Drive Requirements

 Electrically Isolated

 Hermetically Sealed

 Light Weight

 Complimentary N-Channel Available - IRHLYS77034CM

 ESD Rating: Class 1C per MIL-STD-750, Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Units

I_D1@ V_GS= -4.5V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= -4.5V, T_C= 100°C Continuous Drain Current

-20*

-16.6

I_DM@ T_C= 25°C

P_D@ T_C= 25°C

Pulsed Drain Current 

-80

Maximum Power Dissipation

Linear Derating Factor

0.6

± 10

W/°C

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

181

-20

E_AR

dv/dt

T_J

7.5

V/ns

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

-10.9

-55 to + 150

T_STG

Storage Temperature Range

°C

Package Mounting Surface Temp. 300 (0.063 in. / 1.6mm from case for 10s)

Weight 4.3 (Typical)

* Current is limited by package

For Footnotes, refer to the page 2.

2020-03-02

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7...9

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与IRHLYS797034CMSCS相关器件

型号	品牌	获取价格	描述	数据表
IRHM150	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 25A I(D) \| TO-254AA
IRHM250	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 25A I(D) \| TO-254AA
IRHM2C50SE	INFINEON	获取价格	TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A)
IRHM2C50SED	INFINEON	获取价格	Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, M
IRHM2C50SEDPBF	INFINEON	获取价格	Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, M
IRHM2C50SEPBF	INFINEON	获取价格	Power Field-Effect Transistor, 10A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Meta
IRHM2C50SEU	INFINEON	获取价格	Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, M
IRHM2C50SEUPBF	INFINEON	获取价格	Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, M
IRHM3054	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
IRHM3054D	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta

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