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IRHLYS797034CM PDF预览

IRHLYS797034CM

更新时间: 2024-11-05 05:39:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
9页 203K
描述
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)

IRHLYS797034CM 技术参数

是否Rohs认证:不符合生命周期:Active
包装说明:FLANGE MOUNT, R-XSFM-P3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.3
Is Samacsys:N其他特性:RADIATION HARDENED
雪崩能效等级(Eas):181 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):20 A
最大漏极电流 (ID):20 A最大漏源导通电阻:0.074 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-257AA
JESD-30 代码:R-XSFM-P3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):75 W最大脉冲漏极电流 (IDM):80 A
认证状态:Not Qualified参考标准:MIL-19500; RH - 100K Rad(Si)
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:PIN/PEG
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):185 ns最大开启时间(吨):297 ns
Base Number Matches:1

IRHLYS797034CM 数据手册

 浏览型号IRHLYS797034CM的Datasheet PDF文件第2页浏览型号IRHLYS797034CM的Datasheet PDF文件第3页浏览型号IRHLYS797034CM的Datasheet PDF文件第4页浏览型号IRHLYS797034CM的Datasheet PDF文件第5页浏览型号IRHLYS797034CM的Datasheet PDF文件第6页浏览型号IRHLYS797034CM的Datasheet PDF文件第7页 
PD-97292A  
2N7625T3  
IRHLYS797034CM  
60V, P-CHANNEL  
RADIATION HARDENED  
LOGIC LEVEL POWER MOSFET  
THRU-HOLE (Low-Ohmic TO-257AA)  
TECHNOLOGY  
™
Product Summary  
Part Number  
Radiation Level RDS(on)  
ID  
IRHLYS797034CM 100K Rads (Si) 0.074-20A*  
IRHLYS793034CM 300K Rads (Si) 0.074-20A*  
Low-Ohmic  
TO-257AA  
International Rectifier’s R7TM Logic Level Power  
MOSFETs provide simple solution to interfacing  
CMOS and TTL control circuits to power devices in  
space and other radiation environments. The  
threshold voltage remains within acceptable  
operating limits over the full operating temperature  
Features:  
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Light Weight  
and post radiation.  
This is achieved while  
maintaining single event gate rupture and single  
event burnout immunity.  
These devices are used in applications such as  
current boost low signal source in PWM, voltage  
comparator and operational amplifiers.  
Complimentary N-Channel Available -  
IRHLYS77034CM  
Pre-Irradiation  
Absolute Maximum Ratings  
Parameter  
Units  
I @V  
D
I @V  
D
= -4.5V, T = 25°C Continuous Drain Current  
-20*  
GS  
GS  
C
= -4.5V, T = 100°C Continuous Drain Current  
C
-16.6  
-80  
A
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
DM  
@ T = 25°C  
P
D
75  
W
W/°C  
V
C
0.6  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±10  
GS  
E
181  
mJ  
A
AS  
I
-20  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
7.5  
mJ  
V/ns  
AR  
dv/dt  
10.9  
-55 to 150  
T
J
T
Storage Temperature Range  
°C  
g
STG  
Lead Temperature  
Weight  
300 (0.063in/1.6mm from case for 10s)  
4.3 (Typical)  
* Current is limited by package  
For footnotes refer to the last page  
www.irf.com  
1
10/05/10  

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