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IRHLUC730Z4 PDF预览

IRHLUC730Z4

更新时间： 2024-11-06 01:09:19
品牌 Logo 应用领域
英飞凌 - INFINEON 开关晶体管
页数 文件大小 规格书
9页 207K
描述
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT

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中文翻译

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IRHLUC730Z4 数据手册

 浏览型号IRHLUC730Z4的Datasheet PDF文件第2页浏览型号IRHLUC730Z4的Datasheet PDF文件第3页浏览型号IRHLUC730Z4的Datasheet PDF文件第4页浏览型号IRHLUC730Z4的Datasheet PDF文件第5页浏览型号IRHLUC730Z4的Datasheet PDF文件第6页浏览型号IRHLUC730Z4的Datasheet PDF文件第7页 
PD-97573  
2N7617UC  
IRHLUC770Z4  
60V, DUAL-N CHANNEL  
TECHNOLOGY  
RADIATION HARDENED  
LOGIC LEVEL POWER MOSFET  
SURFACE MOUNT (LCC-6)  
™
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHLUC770Z4 100K Rads (Si) 0.75Ω 0.89A  
IRHLUC730Z4 300K Rads (Si) 0.75Ω 0.89A  
LCC-6  
International Rectifier’s R7TM Logic Level Power MOSFETs  
provide simple solution to interfacing CMOS and TTL control  
circuits to power devices in space and other radiation  
environments.The threshold voltage remains within  
acceptable operating limits over the full operating  
temperature and post radiation.This is achieved while  
maintaining single event gate rupture and single event  
burnout immunity.  
Features:  
n
5V CMOS and TTL Compatible  
n
n
n
n
n
n
n
n
n
Low RDS(on)  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
The device is ideal when used to interface directly with most  
logic gates, linear IC’s, micro-controllers, and other device  
types that operate from a 3.3-5V source. It may also be  
used to increase the output current of a PWM, voltage  
comparator or an operational amplifier where the logic level  
drive signal is available.  
Hermetically Sealed  
Light Weight  
Complimentary P-Channel Available -  
IRHLUC7970Z4  
Absolute Maximum Ratings (Per Die)  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 4.5V, T = 25°C Continuous Drain Current  
0.89  
D
GS  
GS  
C
A
I
D
= 4.5V, T = 100°C Continuous Drain Current  
0.56  
3.56  
1.0  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
DM  
@ T = 25°C  
P
W
W/°C  
V
D
C
0.01  
±10  
V
GS  
E
20  
mJ  
A
AS  
I
0.89  
0.1  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
mJ  
V/ns  
AR  
dv/dt  
4.7  
T
-55 to 150  
J
°C  
g
T
Storage Temperature Range  
Pckg. Mounting SurfaceTemp  
Weight  
STG  
300 (for 5s)  
0.2 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
10/18/10  
1234567...9

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