是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | HERMETIC SEALED, CERAMIC PACKAGE-3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.25 |
雪崩能效等级(Eas): | 110 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (Abs) (ID): | 18 A | 最大漏极电流 (ID): | 18 A |
最大漏源导通电阻: | 0.04 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-257AA | JESD-30 代码: | R-XSFM-P3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 75 W |
最大脉冲漏极电流 (IDM): | 72 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | PIN/PEG | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHF58034CMPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 18A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Meta | |
IRHF58130 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) | |
IRHF58130PBF | INFINEON |
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Power Field-Effect Transistor, 11.7A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, M | |
IRHF58230 | INFINEON |
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RADIATION GARDENED POWER MOSFET THRU-HOLE (TO-39) | |
IRHF58Z30 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) | |
IRHF58Z30CM | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) | |
IRHF593110 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) | |
IRHF593110PBF | INFINEON |
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Power Field-Effect Transistor, 2.6A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Met | |
IRHF593130 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) | |
IRHF593130SCS | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6.7A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Me |