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IRHF58034CM PDF预览

IRHF58034CM

更新时间: 2024-11-05 03:35:39
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
8页 134K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)

IRHF58034CM 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:HERMETIC SEALED, CERAMIC PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.25
雪崩能效等级(Eas):110 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):18 A最大漏极电流 (ID):18 A
最大漏源导通电阻:0.04 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-257AAJESD-30 代码:R-XSFM-P3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):75 W
最大脉冲漏极电流 (IDM):72 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:PIN/PEG端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRHF58034CM 数据手册

 浏览型号IRHF58034CM的Datasheet PDF文件第2页浏览型号IRHF58034CM的Datasheet PDF文件第3页浏览型号IRHF58034CM的Datasheet PDF文件第4页浏览型号IRHF58034CM的Datasheet PDF文件第5页浏览型号IRHF58034CM的Datasheet PDF文件第6页浏览型号IRHF58034CM的Datasheet PDF文件第7页 
                                                                             
PD - 93825D  
IRHY57034CM  
JANSR2N7483T3  
60V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (TO-257AA)  
REF: MIL-PRF-19500/702  
TECHNOLOGY  
5
™
Product Summary  
Part Number Radiation Level RDS(on)  
IRHY57034CM 100K Rads (Si) 0.04Ω  
IRHY53034CM 300K Rads (Si) 0.04Ω  
IRHY54034CM 500K Rads (Si) 0.04Ω  
ID  
QPL Part Number  
18A* JANSR2N7483T3  
18A* JANSF2N7483T3  
18A* JANSG2N7483T3  
IRHF58034CM 1000K Rads (Si) 0.04818A* JANSH2N7483T3  
TO-257AA  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space  
applications. These devices have been characterized  
Features:  
for Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
of low RDS(on) and low gate charge reduces the power  
losses in switching applications such as DC to DC  
converters and motor control. These devices retain  
all of the well established advantages of MOSFETs  
such as voltage control, fast switching, ease of  
paralleling and temperature stability of electrical  
parameters.  
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Ultra Low RDS(on)  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Package  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
18*  
D
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
18*  
72  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
75  
W
W/°C  
V
D
C
Linear Derating Factor  
0.6  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
110  
18  
GS  
E
mJ  
A
AS  
I
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
7.5  
mJ  
V/ns  
AR  
dv/dt  
10  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Lead Temperature  
Weight  
300 (0.063in./1.6mm from case for 10sec)  
4.3 (Typical)  
* Current is limited by package  
For footnotes refer to the last page  
www.irf.com  
1
04/26/06  

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