是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | CYLINDRICAL, O-MBCY-W3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.77 |
雪崩能效等级(Eas): | 68 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 3.5 A |
最大漏源导通电阻: | 0.69 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-205AF | JESD-30 代码: | O-MBCY-W3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 14 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | WIRE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHF7110SCV | INFINEON |
获取价格 |
暂无描述 | |
IRHF7130 | INFINEON |
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REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR | |
IRHF7130PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8A I(D), 100V, 0.185ohm, 1-Element, N-Channel, Silicon, Met | |
IRHF7210 | INFINEON |
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Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Me | |
IRHF7210PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Me | |
IRHF7230 | INFINEON |
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REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?? TRANSISTOR | |
IRHF7234 | INFINEON |
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Power Field-Effect Transistor, 4.8A I(D), 250V, 0.48ohm, 1-Element, N-Channel, Silicon, Me | |
IRHF7234PBF | INFINEON |
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Power Field-Effect Transistor, 4.8A I(D), 250V, 0.48ohm, 1-Element, N-Channel, Silicon, Me | |
IRHF7310 | ETC |
获取价格 |
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IRHF7310SE | INFINEON |
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TRANSISTOR N-CHANNEL(BVdss=400V, Rds(on)=4.5ohm, Id=1.15A) |