Datasheet > IRHF7310

IRHF7310

更新时间： 2024-11-17 23:58:55

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IRHF7310 数据手册

Provisional Data Sheet No. PD-9.1444

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET^®TRANSISTOR

IRHF7310SE

N-CHANNEL

SINGLE EVENT EFFECT (SEE) RAD HARD

400 Volt, 4.5Ω, (SEE) RAD HARD HEXFET

Product Summary

Part Number

BVDSS

RDS(on)

International Rectifier’s (SEE)RAD HARD technology

HEXFETs demonstrate virtual immunity to SEE fail-

ure.Additionally, under identical pre- and post-radia-

tion test conditions, International Rectifier’s RAD HARD

HEXFETs retain identical electrical specifications up

to 1 x 10⁵Rads (Si) total dose. No compensation in

gate drive circuitry is required.These devices are also

capable of surviving transient ionization pulses as high

as 1 x 10¹²Rads (Si)/Sec, and return to normal opera-

tion within a few microseconds. Since the SEE pro-

cess utilizes International Rectifier’s patented HEXFET

technology, the user can expect the highest quality

and reliability in the industry.

IRHF7310SE

400V

4.5Ω

1.15A

Features:

■ Radiation Hardened up to 1 x 10⁵Rads (Si)

■ Single Event Burnout (SEB) Hardened

■ Single Event Gate Rupture (SEGR) Hardened

■ Gamma Dot (Flash X-Ray) Hardened

■ Neutron Tolerant

■ Identical Pre- and Post-Electrical Test Conditions

■ Repetitive Avalanche Rating

■ Dynamic dv/dt Rating

■ Simple Drive Requirements

■ Ease of Paralleling

RAD HARD HEXFET transistors also feature all of the

well-established advantages of MOSFETs, such as volt-

age control, very fast switching, ease of paralleling and

temperature stability of the electrical parameters.

■ Hermetically Sealed

They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, chop-

pers, audio amplifiers and high-energy pulse circuits

in space and weapons environments.

Absolute Maximum Ratings

Parameter

IRHF7310SE

Units

@ V

= 12V, T = 25°C Continuous Drain Current

GS C

1.15

0.70

4.6

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy ➁

Peak Diode Recovery dv/dt ➂

Operating Junction

@ T = 25°C

W/K ➄

2.0

±20

dv/dt

4.0

V/ns

-55 to 150

Storage Temperature Range

Lead Temperature

STG

(0.063 in. (1.6mm) from

case for 10 sec.)

0.98 (typical)

300

^oC

Weight

12 3 4

中文翻译

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与IRHF7310相关器件

型号	品牌	获取价格	描述	数据表
IRHF7310SE	INFINEON	获取价格	TRANSISTOR N-CHANNEL(BVdss=400V, Rds(on)=4.5ohm, Id=1.15A)
IRHF7330SE	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-205AF)
IRHF7330SEPBF	INFINEON	获取价格	暂无描述
IRHF7330SESCSPBF	INFINEON	获取价格	Power Field-Effect Transistor, 3A I(D), 400V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal
IRHF7430SE	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
IRHF7430SEPBF	INFINEON	获取价格	Power Field-Effect Transistor, 2.5A I(D), 500V, 1.77ohm, 1-Element, N-Channel, Silicon, Me
IRHF7430SESCS	INFINEON	获取价格	Power Field-Effect Transistor, 2.6A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Met
IRHF7430SESCSPBF	INFINEON	获取价格	Power Field-Effect Transistor, 2.6A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Met
IRHF8110	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHF8110PBF	INFINEON	获取价格	Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Me

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