是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | CYLINDRICAL, O-MBCY-W3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.19 |
其他特性: | RADIATION HARDENED | 雪崩能效等级(Eas): | 68 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (Abs) (ID): | 3.5 A | 最大漏极电流 (ID): | 3.5 A |
最大漏源导通电阻: | 0.69 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-205AF | JESD-30 代码: | O-MBCY-W3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 15 W | 最大脉冲漏极电流 (IDM): | 14 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | WIRE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHF8110PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Me | |
IRHF8110SCV | INFINEON |
获取价格 |
Power Field-Effect Transistor, | |
IRHF8130 | INFINEON |
获取价格 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR | |
IRHF8130PBF | INFINEON |
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Power Field-Effect Transistor, 8A I(D), 100V, 0.185ohm, 1-Element, N-Channel, Silicon, Met | |
IRHF8210 | INFINEON |
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Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Me | |
IRHF8210PBF | INFINEON |
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Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Me | |
IRHF8230 | INFINEON |
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REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?? TRANSISTOR | |
IRHF8234 | INFINEON |
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Power Field-Effect Transistor, 4.8A I(D), 250V, 0.48ohm, 1-Element, N-Channel, Silicon, Me | |
IRHF8234PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.8A I(D), 250V, 0.48ohm, 1-Element, N-Channel, Silicon, Me | |
IRHF9130 | INFINEON |
获取价格 |
TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A) |