型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHG54110PBF | INFINEON |
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Power Field-Effect Transistor, 1.6A I(D), 100V, 0.29ohm, 4-Element, N-Channel, Silicon, Me | |
IRHG563110 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE 100V, Combination 2N-2P-CHANNEL | |
IRHG567110 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE 100V, Combination 2N-2P-CHANNEL | |
IRHG567110PBF | INFINEON |
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Power Field-Effect Transistor, 1.6A I(D), 100V, 0.29ohm, 4-Element, N-Channel and P-Channe | |
IRHG567110SCS | INFINEON |
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暂无描述 | |
IRHG57110 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036) | |
IRHG57110SCS | INFINEON |
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100V 100kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package - Standard P | |
IRHG58110 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036) | |
IRHG58110PBF | INFINEON |
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暂无描述 | |
IRHG593110 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB) |