5秒后页面跳转
IRHG54110 PDF预览

IRHG54110

更新时间: 2024-11-04 21:54:03
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 112K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036)

IRHG54110 数据手册

 浏览型号IRHG54110的Datasheet PDF文件第2页浏览型号IRHG54110的Datasheet PDF文件第3页浏览型号IRHG54110的Datasheet PDF文件第4页浏览型号IRHG54110的Datasheet PDF文件第5页浏览型号IRHG54110的Datasheet PDF文件第6页浏览型号IRHG54110的Datasheet PDF文件第7页 
PD - 94432A  
IRHG57110  
100V, Quad N-CHANNEL  
RAD-HardHEXFET®  
RADIATION HARDENED  
POWER MOSFET  
TECHNOLOGY  
THRU-HOLE (MO-036)  
R
5
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHG57110 100K Rads (Si)  
IRHG53110 300K Rads (Si)  
IRHG54110 600K Rads (Si)  
0.29Ω  
0.29Ω  
0.29Ω  
1.6A  
1.6A  
1.6A  
1.6A  
IRHG58110 1000K Rads (Si) 0.31Ω  
MO-036AB  
Features:  
International Rectifier’s RAD-HardTM HEXFET® MOSFET  
Technology provides high performance power MOSFETs  
for space applications. This technology has over a decade  
of proven performance and reliability in satellite applica-  
tions. These devices have been characterized for both  
Total Dose and Single Event Effects (SEE). The combina-  
tion of low RDS(on) and low gate charge reduces the power  
losses in switching applications such as DC to DC con-  
verters and motor control. These devices retain all of the  
well established advantages of MOSFETs such as voltage  
control, fast switching, ease of paralleling and tempera-  
ture stability of electrical parameters.  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Package  
Light Weight  
Absolute Maximum Ratings (Per Die)  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
1.6  
D
GS  
C
A
I
D
= 12V, T = 100°C Continuous Drain Current  
1.0  
6.4  
GS  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
1.4  
W
W/°C  
V
D
C
Linear Derating Factor  
0.011  
±20  
V
Gate-to-Source Voltage  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
130  
mJ  
A
AS  
I
1.6  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
0.14  
mJ  
V/ns  
AR  
dv/dt  
6.5  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Lead Temperature  
Weight  
300 (0.63 in./1.6 mm from case for 10s)  
1.3 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
08/01/02  

与IRHG54110相关器件

型号 品牌 获取价格 描述 数据表
IRHG54110PBF INFINEON

获取价格

Power Field-Effect Transistor, 1.6A I(D), 100V, 0.29ohm, 4-Element, N-Channel, Silicon, Me
IRHG563110 INFINEON

获取价格

RADIATION HARDENED POWER MOSFET THRU-HOLE 100V, Combination 2N-2P-CHANNEL
IRHG567110 INFINEON

获取价格

RADIATION HARDENED POWER MOSFET THRU-HOLE 100V, Combination 2N-2P-CHANNEL
IRHG567110PBF INFINEON

获取价格

Power Field-Effect Transistor, 1.6A I(D), 100V, 0.29ohm, 4-Element, N-Channel and P-Channe
IRHG567110SCS INFINEON

获取价格

暂无描述
IRHG57110 INFINEON

获取价格

RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036)
IRHG57110SCS INFINEON

获取价格

100V 100kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package - Standard P
IRHG58110 INFINEON

获取价格

RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036)
IRHG58110PBF INFINEON

获取价格

暂无描述
IRHG593110 INFINEON

获取价格

RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB)