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IRHI7460SE

更新时间： 2024-11-04 22:24:03
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
4页 91K
描述
TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=20A)

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中文翻译

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IRHI7460SE 技术参数

是否Rohs认证： 不符合生命周期：Active
包装说明：FLANGE MOUNT, R-MSFM-P3Reach Compliance Code：compliant
风险等级：5.34配置：SINGLE
最小漏源击穿电压：500 V最大漏极电流 (Abs) (ID)：20 A
最大漏极电流 (ID)：20.1 A最大漏源导通电阻：0.2 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-259AA
JESD-30 代码：R-MSFM-P3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：METAL封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：300 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
端子形式：PIN/PEG端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRHI7460SE 数据手册

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Previous Datasheet  
Index  
Next Data Sheet  
Provisional Data Sheet No. PD-9.1224A  
REPETITIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTOR  
IRHI7460SE  
N-CHANNEL  
SINGLE EVENT EFFECT (SEE) RAD HARD  
Product Summary  
Part Number  
500 Volt, 0.32Ω, (SEE) RAD HARD HEXFET  
BVDSS  
RDS(on)  
ID  
International Rectifier’s (SEE) RAD HARD technology  
HEXFETs demonstrate virtual immunity to SEE fail-  
ure.Additionally, under identical pre- and post-radia-  
tion test conditions, International Rectifier’s RAD HARD  
HEXFETs retain identical electrical specifications up  
to 1 x 105 Rads (Si) total dose. No compensation in  
gate drive circuitry is required.These devices are also  
capable of surviving transient ionization pulses as high  
as 1 x 1012 Rads (Si)/Sec, and return to normal opera-  
tion within a few microseconds. Since the SEE pro-  
cess utilizes International Rectifier’s patented HEXFET  
technology, the user can expect the highest quality  
and reliability in the industry.  
IRHI7460SE  
500V  
0.32Ω  
20A  
Features:  
■ Radiation Hardened up to 1 x 105 Rads (Si)  
■ Single Event Burnout (SEB) Hardened  
■ Single Event Gate Rupture (SEGR) Hardened  
■ Gamma Dot (Flash X-Ray) Hardened  
■ Neutron Tolerant  
■ Identical Pre- and Post-Electrical Test Conditions  
■ Repetitive Avalanche Rating  
■ Dynamic dv/dt Rating  
■ Simple Drive Requirements  
■ Ease of Paralleling  
■ Hermetically Sealed  
■ Electrically Isolated  
■ Ceramic Eyelets  
RAD HARD HEXFET transistors also feature all of the  
well-established advantages of MOSFETs, such as volt-  
age control, very fast switching, ease of paralleling and  
temperature stability of the electrical parameters.  
They are well-suited for applications such as switch-  
ing power supplies, motor controls, inverters, chop-  
pers, audio amplifiers and high-energy pulse circuits  
in space and weapons environments.  
Pre-Radiation  
Absolute Maximum Ratings  
Parameter  
IRHI7460SE  
Units  
I
D
@ V  
= 12V, T = 25°C Continuous Drain Current  
20  
GS  
C
I
@ V  
= 12V, T = 100°C Continuous Drain Current  
12  
A
D
GS  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
Linear Derating Factor  
80  
DM  
@ T = 25°C  
P
D
300  
2.4  
W
W/K ➄  
V
C
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy ➁  
Avalanche Current ➀  
±20  
500  
20  
GS  
E
mJ  
AS  
I
A
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➂  
Operating Junction  
30  
mJ  
AR  
dv/dt  
3.5  
V/ns  
T
-55 to 150  
J
T
Storage Temperature Range  
Lead Temperature  
STG  
oC  
g
(0.063 in. (1.6mm) from  
case for 10 sec.)  
10.9 (typical)  
300  
Weight  
To Order  
 
 
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