是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | HERMETIC SEALED PACKAGE-3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.8 |
雪崩能效等级(Eas): | 10 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 1.6 A |
最大漏源导通电阻: | 1.2 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-39 | JESD-30 代码: | O-MBCY-W3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
最大脉冲漏极电流 (IDM): | 6.4 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHLF6970Z4 | INFINEON |
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RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE | |
IRHLF6970Z4PBF | INFINEON |
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暂无描述 | |
IRHLF730Z4 | INFINEON |
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RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) | |
IRHLF730Z4PBF | INFINEON |
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Small Signal Field-Effect Transistor, 1.6A I(D), 60V, 1-Element, N-Channel, Silicon, Metal | |
IRHLF730Z4SCS | INFINEON |
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Small Signal Field-Effect Transistor, 1.6A I(D), 60V, 1-Element, N-Channel, Silicon, Metal | |
IRHLF73110 | INFINEON |
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RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) | |
IRHLF73214 | INFINEON |
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RADIATION HARDENED LOGIC LEVEL POWER MOSFET | |
IRHLF740Z4 | INFINEON |
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RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) | |
IRHLF770Z4 | INFINEON |
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RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) | |
IRHLF770Z4SCS | INFINEON |
获取价格 |
Rad hard, 60V, 1.6A, single, N-channel MOSFET, R7 in a TO-205AF package - TO-205AF, 100 kr |