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IRHLF6930Z4 PDF预览

IRHLF6930Z4

更新时间: 2024-11-05 23:14:51
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 147K
描述
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE

IRHLF6930Z4 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:HERMETIC SEALED PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.8
雪崩能效等级(Eas):10 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):1.6 A
最大漏源导通电阻:1.2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-39JESD-30 代码:O-MBCY-W3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大脉冲漏极电流 (IDM):6.4 A认证状态:Not Qualified
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRHLF6930Z4 数据手册

 浏览型号IRHLF6930Z4的Datasheet PDF文件第2页浏览型号IRHLF6930Z4的Datasheet PDF文件第3页浏览型号IRHLF6930Z4的Datasheet PDF文件第4页浏览型号IRHLF6930Z4的Datasheet PDF文件第5页浏览型号IRHLF6930Z4的Datasheet PDF文件第6页浏览型号IRHLF6930Z4的Datasheet PDF文件第7页 
PD - 94685  
RADIATION HARDENED  
LOGIC LEVEL POWER MOSFET  
THRU-HOLE (TO-39)  
IRHLF6970Z4  
60V, P-CHANNEL  
TECHNOLOGY  
Product Summary  
Part Number Radiation Level RDS(on)  
IRHLF6970Z4 100K Rads (Si) 1.2Ω  
IRHLF6930Z4 300K Rads (Si) 1.2Ω  
ID  
-1.6A  
-1.6A  
International Rectifier’s R6TM Logic Level Power  
Mosfets provide simple solution to interfacing CMOS  
and TTL control circuits to power devices in space  
and other radiation environments. The threshold  
voltage remains within accptable operating limits  
over the full operating temperature and post radia-  
tion. This is achieved while maintaining single event  
gate rupture and single event burnout immunity.  
T0-39  
Features:  
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
These devices are used in applications such as cur-  
rent boost low signal source in PWM, voltage com-  
parator and operational amplifiers.  
Hermetically Sealed  
Light Weight  
Complimentary N-Channel Available -  
IRHLF670Z4  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= -4.5V, T = 25°C Continuous Drain Current  
-1.6  
D
GS  
C
A
I
= -4.5V, T = 100°C Continuous Drain Current  
-1.0  
-6.4  
D
GS  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
DM  
@ T = 25°C  
P
5.0  
W
W/°C  
V
D
C
0.04  
±10  
V
GS  
E
10  
mJ  
A
AS  
I
-1.6  
AR  
E
AR  
dv/dt  
0.5  
mJ  
V/ns  
-4.0  
T
-55 to 150  
J
T
Storage Temperature Range  
Lead Temperature  
oC  
g
STG  
300 (0.063in/1.6mm from case for 10s)  
0.98 ( Typical )  
Weight  
For footnotes refer to the last page  
www.irf.com  
1
07/07/03  

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