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IRHLF77214 PDF预览

IRHLF77214

更新时间: 2024-11-06 03:36:55
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
9页 220K
描述
RADIATION HARDENED LOGIC LEVEL POWER MOSFET

IRHLF77214 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:HERMETIC SEALED, MODIFIED TO-39, 3 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.38
Is Samacsys:N雪崩能效等级(Eas):29 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:250 V
最大漏极电流 (Abs) (ID):3.3 A最大漏极电流 (ID):3.3 A
最大漏源导通电阻:1 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-205AFJESD-30 代码:O-MBCY-W3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):22.7 W最大脉冲漏极电流 (IDM):13.2 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:TIN LEAD
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRHLF77214 数据手册

 浏览型号IRHLF77214的Datasheet PDF文件第2页浏览型号IRHLF77214的Datasheet PDF文件第3页浏览型号IRHLF77214的Datasheet PDF文件第4页浏览型号IRHLF77214的Datasheet PDF文件第5页浏览型号IRHLF77214的Datasheet PDF文件第6页浏览型号IRHLF77214的Datasheet PDF文件第7页 
PD-97253  
2N7610T2  
RADIATION HARDENED  
LOGIC LEVEL POWER MOSFET  
THRU-HOLE (TO-39)  
IRHLF77214  
250V, N-CHANNEL  
TECHNOLOGY  
™
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHLF77214  
IRHLF73214  
100K Rads (Si) 1.0Ω  
300K Rads (Si) 1.0Ω  
3.3A  
3.3A  
TO-39  
International Rectifier’s R7TM Logic Level Power  
MOSFETs provide simple solution to interfacing  
CMOS and TTL control circuits to power devices in  
space and other radiation environments. The  
threshold voltage remains within acceptable  
operating limits over the full operating temperature  
and post radiation. This is achieved while maintaining  
single event gate rupture and single event burnout  
immunity.  
Features:  
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Light Weight  
These devices are used in applications such as  
current boost low signal source in PWM, voltage  
comparator and operational amplifiers.  
Pre-Irradiation  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 4.5V, T =25°C  
Continuous Drain Current  
3.3  
D
GS  
GS  
C
A
I
D
= 4.5V, T =100°C Continuous Drain Current  
2.1  
13.2  
22.7  
0.18  
±10  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
DM  
@ T = 25°C  
P
W
W/°C  
V
D
C
V
Gate-to-Source Voltage  
GS  
E
Single Pulse Avalanche Energy Á  
Avalanche Current À  
29  
mJ  
A
AS  
I
3.3  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
2.3  
mJ  
V/ns  
AR  
dv/dt  
3.29  
-55 to 150  
T
J
T
Storage Temperature Range  
°C  
g
STG  
Lead Temperature  
Weight  
300 (0.063in/1.6mm from case for 10s)  
0.98 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
03/13/08  

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