是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | HERMETIC SEALED, MODIFIED TO-39, 3 PIN | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.38 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 29 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 250 V |
最大漏极电流 (Abs) (ID): | 3.3 A | 最大漏极电流 (ID): | 3.3 A |
最大漏源导通电阻: | 1 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-205AF | JESD-30 代码: | O-MBCY-W3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 22.7 W | 最大脉冲漏极电流 (IDM): | 13.2 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | WIRE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHLF780Z4 | INFINEON |
获取价格 |
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) | |
IRHLF7930Z4 | INFINEON |
获取价格 |
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) | |
IRHLF7930Z4PBF | INFINEON |
获取价格 |
暂无描述 | |
IRHLF7930Z4SCS | INFINEON |
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Small Signal Field-Effect Transistor, 1.5A I(D), 60V, 1-Element, P-Channel, Silicon, Metal | |
IRHLF7970Z4 | INFINEON |
获取价格 |
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) | |
IRHLF7970Z4PBF | INFINEON |
获取价格 |
Small Signal Field-Effect Transistor, 1.5A I(D), 60V, 1-Element, P-Channel, Silicon, Metal | |
IRHLF7970Z4SCS | INFINEON |
获取价格 |
Rad hard, -60V, -1.6A, single, P-channel MOSFET, R7 in a TO-205AF package - TO-205AF, 100 | |
IRHLF7S3214SCS | INFINEON |
获取价格 |
Rad hard, 200V, 3.3A, single, N-channel MOSFET, R7 in a TO-205AF package - TO-205AF, 300 k | |
IRHLF7S7214 | INFINEON |
获取价格 |
Rad hard, 200V, 3.3A, single, N-channel MOSFET, R7 in a TO-205AF package - TO-205AF, 100 k | |
IRHLF7S7214SCS | INFINEON |
获取价格 |
Rad hard, 200V, 3.3A, single, N-channel MOSFET, R7 in a TO-205AF package - TO-205AF, 100 k |